Organic Mask Layer Mineralization for Semiconductor Etching
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Solution Overview
Problem
The challenge in semiconductor manufacturing is forming finer circuit patterns on substrates while maintaining sufficient etching resistance, as highly transparent mask layers used for pattern transfer have low hardness, leading to compromised etching resistance.
Innovation Solution
A substrate processing method involving molecular layer deposition (MLD) to mineralize an organic film, using silicon-containing gases and oxygen radicals to form a silicon oxide film on the mask layer, enhancing its etching resistance and process freedom.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a highly transparent material is employed to improve pattern transfer fidelity, then the transparency is improved, but the hardness and etching resistance are deteriorated
Solution Approach 1:
The invention uses a composite structure consisting of an organic mask layer and an inorganic oxide film formed thereon. The organic layer provides pattern definition and transparency, while the inorganic oxide film provides etching resistance. This composite approach allows both requirements to be satisfied simultaneously by combining materials with complementary properties.
Solution Approach 2:
The inorganic oxide film is formed on the organic mask layer before the etching process. This preliminary formation of the protective oxide layer ensures that the organic mask layer is already protected when the etching process begins, preventing direct exposure of the organic material to harsh etching conditions.
2Manufacturing precision
If the minimum feature dimension of the photoresist film is reduced to form finer patterns, then the pattern fineness is improved, but the etching resistance is deteriorated
Solution Approach 1:
By forming an inorganic oxide film on the fine-patterned organic mask layer, the invention creates a composite structure where the inorganic layer provides the necessary mechanical strength and etching resistance that would be insufficient in the thin organic layer alone, thereby enabling successful processing of finer patterns.
Solution Approach 2:
The inorganic oxide film is formed specifically on the mask layer regions requiring enhanced protection, providing localized reinforcement without affecting the overall pattern dimensions or requiring changes to the patterning process itself.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively increases the etching resistance of the mask layer, allowing for the formation of finer patterns and improved processing capabilities, addressing the trade-off between pattern fidelity and etching resistance.
Implementation Method 1
A substrate processing method involving molecular layer deposition (MLD) to mineralize an organic film, using silicon-containing gases and oxygen radicals to form a silicon oxide film on the mask layer
Implementation Method 2
using silicon-containing gases and oxygen radicals to form a silicon oxide film on the mask layer
Data Source
AI summary
A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.