Organic Mask Taper Angle Control via Solvent Adhesion
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Solution Overview
Problem
Existing methods for forming organic masks and etching semiconductor base films face challenges in controlling the taper angle of etched patterns, with issues related to adhesion strength, peeling off of masks, and achieving accurate taperization across a wide range of angles.
Innovation Solution
A method involving the use of an organic mask where the adhesion strength is selectively decreased at the periphery by permeating an organic solvent, allowing for controlled taperization through heat treatment, and a chemical solution for treating the surface to facilitate organic solvent penetration and prevent peeling, enabling precise control of taper angles during isotropic and anisotropic etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the adhesion strength between the organic mask and base film is increased to prevent peeling, then mask stability is improved, but the ability to achieve controlled taperization is reduced
Solution Approach 1:
The patent applies local quality by creating spatial variation in adhesion strength within the organic mask structure. The mask is designed to have different adhesion characteristics at different locations: strong adhesion at the center portion and weak adhesion at the peripheral portion. This is achieved through selective treatment methods such as varying the thickness of the organic mask layer or applying different surface treatments to different regions, enabling the mask to remain stable during etching while allowing controlled taperization at the edges.
2Ease of manufacture
If conventional methods are used to form organic masks, then mask formation is simple, but precise control of taper angles across a wide range is difficult
Solution Approach 1:
The patent employs parameter changes by systematically varying key parameters of the organic mask such as thickness, material composition, and surface treatment conditions to achieve precise control over taper angles. By adjusting the thickness of the organic mask layer or modifying the chemical composition of the organic material, the patent enables continuous adjustment of taper angles across a wide range while maintaining ease of manufacture through standard fabrication processes.
3Stability of the object's composition
If the organic mask adhesion is uniformly strong across the entire mask, then peeling is prevented, but accurate taperization cannot be achieved
Solution Approach 1:
The patent applies asymmetry by deliberately creating an asymmetric adhesion distribution within the organic mask. Instead of uniform adhesion, the mask is designed with asymmetric properties where the central region exhibits strong adhesion to the base film while the peripheral regions exhibit weak adhesion. This asymmetric structure is achieved through methods such as creating a thickness gradient or applying selective surface treatments, enabling the mask to maintain stability at the center while allowing controlled material removal and taper formation at the edges.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control and adjustment of taper angles in etched base film patterns, preventing peeling and ensuring accurate taperization, thereby improving the quality of semiconductor fabrication.
Implementation Method 1
a part of or all of an original adhesion strength between a base film and an organic pattern is decreased by permeating an organic solvent into the organic pattern
Implementation Method 2
permeating an organic solvent into the organic pattern through contacting the organic pattern with the organic solvent
Implementation Method 3
a heat treatment for adjusting the adhesion strength, thereby increasing the adhesion strength within a range of adhesion strength below that of the bottom of the organic solvent non-permeated portion
Data Source
AI summary
A method for forming an organic mask, includes:permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; andthereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.