Organic Memory Cell Fabrication via Recessed Electrode Pads
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Solution Overview
Problem
Inorganic solid state memory devices face challenges with high cost, complex architecture, and high power consumption due to their physical size limits and complex circuitry, which hinder their ability to efficiently store data and process information.
Innovation Solution
The method involves forming organic memory cells by creating a recessed area on a dielectric layer using reverse electroplating to simplify the fabrication process, where a controllably conductive media comprising an organic semiconductor material and a passive layer is formed between electrodes, allowing for improved data storage density and reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If inorganic solid state devices are used, then data storage and processing functions are achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent changes the material parameter from inorganic semiconductor to organic semiconductor, which fundamentally alters the device characteristics. Organic semiconductors enable simpler device architectures while maintaining memory functionality, directly resolving the contradiction between reliability and complexity
Solution Approach 2:
The patent replaces complex inorganic semiconductor-based mechanical/electrical systems with organic semiconductor-based systems that utilize electrochemical mechanisms. This substitution simplifies the overall device architecture while preserving data storage functionality
2Reliability
If inorganic solid state devices are used, then data storage is achieved, but manufacturing cost increases
Solution Approach 1:
Changing from inorganic to organic semiconductor materials enables the use of lower-cost fabrication processes. Organic semiconductors can be processed using solution-based techniques and lower temperature processing, significantly reducing manufacturing costs while maintaining data storage functionality
Solution Approach 2:
The patent employs organic semiconductor materials that can be processed using inexpensive materials and methods, replacing costly inorganic semiconductor manufacturing processes with more economical alternatives
3Reliability
If inorganic solid state devices are used, then data storage is achieved, but power consumption increases
Solution Approach 1:
The patent changes the operational mechanism from continuous electrical current (inorganic) to electrochemical switching (organic). Organic memory devices can store data without continuous power supply, dramatically reducing power consumption while maintaining data storage functionality
Solution Approach 2:
The organic memory device uses periodic electrochemical switching to write data, then maintains storage without continuous energy input. This periodic action followed by passive storage reduces overall power consumption compared to continuous operation required by inorganic devices
4Productivity
If silicon based devices are miniaturized, then integration density increases, but physical size limits are approached
Solution Approach 1:
The patent changes the material system from silicon-based to organic semiconductor-based, enabling new scaling possibilities. Organic semiconductors allow for different device geometries and smaller feature sizes that overcome the physical limitations of silicon miniaturization
Solution Approach 2:
The patent employs a recessed area structure that utilizes vertical dimension for active region placement. By forming memory cells in recesses within the substrate, the design achieves higher integration density without further lateral miniaturization, overcoming planar scaling limits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, enhances data storage density, and reduces power consumption by utilizing organic semiconductor materials that can switch between conductive and non-conductive states in response to external stimuli, enabling efficient and compact memory devices.
Implementation Method 1
Removing a portion of the first electrode pad to form a recessed area on top of the pad and in the dielectric layer may be performed by reverse electroplating a portion of the first electrode pad
Implementation Method 2
utilizing organic semiconductor materials that can switch between conductive and non-conductive states in response to external stimuli
Data Source
AI summary
A method of making an organic memory cell which comprises two electrodes with a controllably conductive media between the two electrodes is disclosed. The present invention involves providing a dielectric layer having formed therein one or more first electrode pads; removing a portion of the first electrode pad to form a recessed area on top of the pads and in the dielectric layer using reverse electroplating; forming a controllably conductive media over the first electrode pad in the recessed area; and forming a second electrode over the conductive media. The controllably conductive media contains an organic semiconductor layer and a passive layer.