Organic Microelectronic Device Polarity Definition Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
There is a need for organic electronic devices with higher integration and simplified fabrication processes that can offer improved performance, flexibility, and cost-effectiveness compared to traditional inorganic devices, particularly in applications like smart cards, RFID tags, and active matrix displays.
Innovation Solution
The development of organic electronic devices incorporating a bulk heterojunction active layer with distinct polarity regions, formed by a mixture of donor and acceptor materials, and a polarity definition layer with specific surface characteristics, enabling the creation of dual gate organic field effect transistors, ambipolar transistors, and solar cells through a solution process and annealing techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If organic electronic devices are fabricated using traditional inorganic device processes, then device performance and reliability are improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent changes the material parameters by using organic semiconductors instead of inorganic materials, and controls the molecular orientation parameters through solution processing and annealing conditions to achieve both performance and simplified manufacturing
Solution Approach 2:
The patent employs composite organic semiconductor materials with specific molecular structures that combine electron-transport and hole-transport properties, enabling dual-polarity device operation with simplified fabrication processes
2Adaptability or versatility
If organic electronic devices are designed for higher integration, then device functionality and application range are improved, but fabrication process complexity increases
Solution Approach 1:
The patent creates a universal organic semiconductor layer that can function as both electron-transport and hole-transport channel depending on molecular orientation, enabling multiple device types (n-type, p-type, ambipolar) from a single fabrication process
Solution Approach 2:
The patent uses solution processing parameters and annealing conditions to control molecular orientation, achieving different polarity regions without additional fabrication steps, thus enabling high integration with simplified processes
3Manufacturing precision
If bulk heterojunction active layer is formed with controlled molecular orientation, then carrier mobility and polarity control are improved, but manufacturing process complexity increases
Solution Approach 1:
The patent utilizes the phase transition during solvent evaporation and annealing to control molecular orientation in the bulk heterojunction active layer, achieving precise carrier mobility control through thermodynamic processes rather than complex mechanical alignment
Solution Approach 2:
The patent controls molecular orientation parameters by adjusting solution processing conditions and annealing temperature, achieving precise carrier mobility control through parameter optimization rather than complex fabrication steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the fabrication of devices with enhanced carrier mobility and polarity control, enabling higher integration and flexibility in organic electronic devices, such as dual gate OFETs and solar cells, while simplifying the manufacturing process and reducing costs.
Implementation Method 1
A surface of the active region polarity definition layer may have a hydrophobic characteristic and the majority carriers in the lower region of the bulk heterojunction active layer may be p-type carriers
Implementation Method 2
The surface of the active region polarity definition layer may have a hydrophilic characteristic and the majority carriers in the lower region of the bulk heterojunction active layer may be n-type carriers
Implementation Method 3
The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities
Implementation Method 4
a first annealing process may be performed at a lower temperature than a lower of glass transition temperatures of each of the donor and the acceptor. After the performing the first annealing process, a second annealing process may be performed at a higher temperature
Data Source
AI summary
An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.