Organic Molecular Layer Nonvolatile Memory Scaling
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Solution Overview
Problem
Scaling down of nonvolatile semiconductor memory devices is technically challenging, and existing methods struggle to improve memory performance and reduce bit cost effectively.
Innovation Solution
A nonvolatile semiconductor memory device is designed with an organic molecular layer comprising a first organic molecular film with a charge storing unit and a second amphiphilic organic molecular film, sandwiched between a semiconductor layer and a block insulating film, enhancing insulation properties and data retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional charge storing layers are used, then manufacturing is easier, but scaling down becomes technically difficult and memory performance deteriorates
Solution Approach 1:
The patent changes the material parameters of the charge storing layer by using organic molecules with specific electrochemical properties. These molecules can be synthesized with various constitutional units and substituent groups to achieve desired properties, enabling scaling down while maintaining manufacturability through organic synthesis techniques.
Solution Approach 2:
The patent employs a composite structure consisting of organic molecules combined with inorganic block insulating films and control gate electrodes. This composite approach allows the organic charge storing layer to provide the necessary electrochemical properties for scaling down while the inorganic components maintain structural integrity and ease of manufacturing.
2Reliability
If memory cell size is reduced, then bit cost decreases, but insulation properties between charge storing layer and control gate electrode deteriorate
Solution Approach 1:
The patent introduces a block insulating film as an intermediary layer between the organic charge storing layer and the control gate electrode. This block insulating film with high dielectric constant provides effective insulation and maintains data retention properties even when the memory cell size is reduced, preventing harmful electrical interference.
Solution Approach 2:
The patent changes the dielectric parameter by using block insulating films with high dielectric constants, which allows for thinner insulation layers that maintain adequate electrical isolation in scaled-down devices, thereby preserving data retention without requiring larger device dimensions.
3Manufacturing precision
If organic molecules are used for charge storing layer, then scaling down is enabled, but quality of block insulating film and control gate electrode formation becomes critical
Solution Approach 1:
The patent optimizes the formation parameters of the block insulating film by selecting materials with high dielectric constants, which allows for thinner films that maintain adequate insulation in scaled-down devices. The control gate electrode formation parameters are also optimized to ensure proper electrical connection while maintaining insulation integrity.
Solution Approach 2:
The patent uses a composite structure where organic charge storing molecules are combined with inorganic block insulating films and control gate electrodes. This composite approach allows each material to be optimized for its specific function, with the organic layer providing charge storage and the inorganic layers providing structural stability and electrical isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves data retention and reliability by optimizing the insulation properties between the charge storing unit and the control gate electrode, enabling further scaling down of memory cells while maintaining performance.
Implementation Method 1
various organic molecules can be formed by organically synthesize a variety of molecular structures and substituent groups, desired electrochemical properties can be applied to the organic molecules
Implementation Method 2
improve qualities of a block insulating film and a control gate electrode, formed on the charge storing layer
Data Source
AI summary
A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.