Organic Nickel CVD Raw Material for High-Purity Thin Films
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Solution Overview
Problem
Existing organic nickel compounds used in chemical vapor deposition for forming nickel thin-films have high melting points, decompose at high temperatures, and introduce impurities into the film, failing to meet requirements for low melting point stability and purity.
Innovation Solution
A chemical vapor deposition raw material comprising an organic nickel compound with a cyclopentadienyl group and a cycloalkenyl group, specifically coordinated with an allyl group, which maintains stability during vaporization and decomposes readily at low temperatures, ensuring high-purity nickel thin-film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional organic nickel compounds (Ni(Cp)2, Ni(Me-Cp)2, Ni(Et-Cp)2) are used as CVD raw materials, then the melting point is reduced, but impurities mix in the prepared Ni film
Solution Approach 1:
The patent changes the chemical structure parameters of the nickel compound by introducing a cycloalkenyl group with specific molecular weight and structure. This structural parameter change results in optimal melting point (low enough for vaporization) while maintaining film purity through controlled decomposition behavior.
Solution Approach 2:
The patent creates a composite ligand system combining cyclopentadienyl group and cycloalkenyl group coordinated to nickel. This composite structure provides both low melting point (from the organic ligands) and proper thermal stability (from the coordinated structure) to prevent impurity formation during vaporization.
2Stability of the object's composition
If Ni(Cp)2 is used as CVD raw material, then high melting point (173°C) and high decomposition temperature are achieved, but the compound does not vaporize readily at low temperature
Solution Approach 1:
The patent adjusts the thermal parameters of the nickel compound by selecting a cycloalkenyl group with specific structure (five or six membered ring). This creates optimal balance: stable enough to not decompose during vaporization, but unstable enough to decompose readily at low temperature (100-300°C) for film formation.
3Temperature
If Ni(Cp)(C3H5) is used as CVD raw material, then low melting point and high vapor pressure are achieved, but the Ni film is contaminated with impurities
Solution Approach 1:
The patent modifies the molecular structure parameters by replacing the propenyl group with a cycloalkenyl group (five or six membered ring). This structural change maintains low melting point and high vapor pressure while improving film purity through more controlled decomposition that releases nickel without contaminating impurities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves stable vaporization and low-temperature decomposition, resulting in a nickel thin-film with improved heat stability and purity, suitable for forming uniform films on three-dimensional electrodes with reduced impurities.
Implementation Method 1
it has proper heat stability such that it does not thermally decompose during vaporization
Implementation Method 2
readily decomposes at low temperature under the film-formation conditions
Implementation Method 3
chemical vapor deposition method (CVD method) or an atomic layer vapor deposition method (ALD method)
Data Source
AI summary
The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. This raw material has a low melting point, proper heat stability and film-formation ability at low temperature. Further, due to a high vapor pressure, the raw material is suitable for a three-dimensional electrode material having a three-dimensional structure.