Organic Photoelectric Device Substrate Preheating
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Solution Overview
Problem
Conventional methods for manufacturing photoelectric conversion devices with organic light receiving layers face challenges in improving heat resistance, particularly during high-temperature processing steps, which can degrade the device's performance and reliability.
Innovation Solution
A method involving a substrate heating process at 270° C. or above before forming the light receiving layer, which includes a dielectric film and conductive materials like TiON, helps enhance the heat resistance of the photoelectric conversion device by volatilizing gases and contamination components that could otherwise affect the layer's integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a high-temperature heating process is performed after forming a light receiving layer including an organic material, then subsequent processing steps (color filter curing, wire bonding, die bonding) can be completed, but the light receiving layer deteriorates due to heat exposure
Solution Approach 1:
The patent applies preliminary action by performing substrate heating at 270°C or higher before forming the light receiving layer. This pre-heating treatment prepares the substrate to withstand subsequent high-temperature processing steps, preventing deterioration of the organic light receiving layer during color filter curing, wire bonding, and die bonding operations.
Solution Approach 2:
The patent changes the temperature parameter by heating the substrate at 270°C or higher before light receiving layer formation. This temperature parameter change modifies the substrate's properties to improve its heat resistance, enabling it to withstand subsequent high-temperature processing without degrading the organic light receiving layer.
2Reliability
If materials with high glass transition temperature are used to improve heat resistance, then heat resistance improves, but the choice range of materials is narrowed due to conflicting requirements for photoelectric conversion efficiency and low dark current
Solution Approach 1:
The patent introduces substrate heating as an intermediary treatment between substrate preparation and light receiving layer formation. This intermediary step modifies the substrate's thermal properties without constraining the selection of organic materials for the light receiving layer, thereby maintaining material selection flexibility while achieving improved heat resistance.
3Device complexity
If conventional processing methods are used without pre-heating, then the manufacturing process is simpler, but gases and contamination components remain on the substrate affecting the integrity of the light receiving layer
Solution Approach 1:
The patent applies preliminary action by performing substrate heating before light receiving layer formation to remove gases and contamination components from the substrate surface. This pre-cleaning treatment ensures that the organic light receiving layer is formed on a clean substrate, improving layer integrity without significantly complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively improves the heat resistance and reduces dark current density in the solid-state imaging device, ensuring better performance and reliability by preventing deterioration of the pixel electrode during subsequent heating processes.
Implementation Method 1
a heating process for heating the substrate at 270° C. or above, the heating process performed before the second process and after the first process
Data Source
AI summary
A method for manufacturing a photoelectric conversion device including a first process where a plurality of pixel electrodes are formed on a dielectric layer; a second process where a light receiving layer that includes an organic material is formed on the plurality of pixel electrodes; and a third process where a counter electrode is formed on the light receiving layer. The first process includes a film forming process of a pixel electrode material on the dielectric layer; a patterning process of the film of the pixel electrode material; and a heating process for heating the substrate at 270° C. after the patterning process. Such process forming a photoelectric conversion device of a solid-state imaging device which also includes a signal reading circuit formed on the substrate, the signal reading circuit capable of reading out the signal according to a quantity of electric charges collected in the first electrode.