Organic Polymer Semiconductor Thin Film Spin Casting
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Solution Overview
Problem
Conventional methods for forming organic semiconductor thin films for OTFTs require vacuum processes, leading to high manufacturing costs and unstable materials with low charge mobility and high leakage currents, making them unsuitable for electronic devices.
Innovation Solution
The use of organic polymer semiconductor compounds with removable substituents, applied through spin casting at room temperature, which are then treated with heat or light to form insoluble thin films with increased charge mobility and reduced leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vacuum processes are used to form organic semiconductor thin films, then manufacturing costs increase, but material stability and charge mobility improve
Solution Approach 1:
The patent changes the processing parameters from vacuum deposition to solution-based spin casting at room temperature, fundamentally altering the manufacturing approach. This parameter change enables the use of simple coating equipment instead of expensive vacuum systems, reducing manufacturing costs while maintaining film quality through optimized solution formulation and post-treatment processes
Solution Approach 2:
The patent introduces soluble polymer derivatives as intermediary materials that can be processed from solution and then converted to the final insoluble semiconductor material through thermal or photochemical treatment. This intermediary approach allows solution processing to be used instead of direct vacuum deposition, achieving both cost reduction and material stability
2Ease of manufacture
If regioregular polythiophene P3HT is used, then charge mobility is low (0.01 cm2/Vs), but manufacturing simplicity is maintained
Solution Approach 1:
The patent modifies the chemical structure parameters of polythiophene derivatives by introducing specific side chains and functional groups that enhance charge carrier mobility. These structural parameter changes enable charge mobility to exceed 0.1 cm2/Vs while maintaining solution processability and manufacturing simplicity
Solution Approach 2:
The patent develops composite organic semiconductor materials that combine the advantages of different polythiophene structures, achieving both high charge mobility and manufacturing simplicity. The composite approach allows optimization of both electrical properties and processability
3Object-generated harmful factors
If polythiophene derivatives with increased solubility are used, then leakage current decreases, but charge mobility becomes low
Solution Approach 1:
The patent optimizes the balance between solubility parameters and charge transport parameters by carefully designing the molecular structure. The modified polythiophene derivatives achieve both low leakage current and high charge mobility simultaneously through controlled introduction of solubilizing groups that do not compromise charge carrier pathways
4Ease of manufacture
If spin casting at room temperature is used, then manufacturing cost decreases, but material insolubility prevents film formation
Solution Approach 1:
The patent performs preliminary modification of the semiconductor material to introduce solubilizing side chains before the spin casting process. This preliminary action ensures that the material can be dissolved in common solvents for solution processing, and the solubility is maintained throughout the coating process until final film formation
Solution Approach 2:
The patent uses soluble polymer derivatives as intermediary forms that can be processed from solution at room temperature. These intermediaries are then converted to the final insoluble semiconductor material through thermal or photochemical treatment after film formation, enabling simple manufacturing while achieving the desired material properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in OTFTs with higher charge mobility and lower leakage currents, improving device performance and making them more suitable for electronic applications.
Implementation Method 1
applied through spin casting at room temperature
Implementation Method 2
treating the applied organic polymer semiconductor compound(s) using heat or light (or radical reaction) to remove a substituent
Implementation Method 3
treating the applied organic polymer semiconductor compound(s) using heat or light (or radical reaction) to remove a substituent
Data Source
AI summary
Disclosed herein is an organic polymer semiconductor compound, a method of forming an organic polymer semiconductor thin film using the same, and an organic thin film transistor using the same. Example embodiments of this invention pertain to an organic polymer semiconductor having a side chain including a removable substituent, and to an organic thin film transistor using the organic polymer semiconductor for an organic active layer, which has lower leakage current, higher charge mobility, and/or a higher on/off ratio.