Organic Rectifier Diode Current Limiting via Metal Complex Doping
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Solution Overview
Problem
Existing organic semiconducting materials for RFID applications lack high current carrying capability with inherent current limiting, which is essential for efficient rectification in diode configurations.
Innovation Solution
A semiconducting material comprising a hole-conducting matrix with a metal complex having Lewis acid properties, specifically carboxylic acid or carboxylic acid anions with electron-withdrawing substituents, such as dirhodium tetratrifluoroacetate, is used to create a diode structure with enhanced current limiting and rectification capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic semiconducting materials are used in RFID applications, then manufacturing cost is reduced and flexibility is improved, but current carrying capability is insufficient without inherent current limiting
Solution Approach 1:
The patent changes the chemical and physical parameters of the organic semiconducting material by incorporating metal complexes with specific Lewis acid properties and electron-withdrawing substituents. This modifies the material's electrical characteristics to achieve inherent current limiting while maintaining organic material advantages for low-cost manufacturing
Solution Approach 2:
The invention creates a composite organic semiconducting material by combining organic compounds with metal complexes (such as carboxylic acid or carboxylic acid anions with electron-withdrawing substituents). This composite structure provides both the processability of organic materials and the electrical performance needed for reliable current carrying with inherent limiting
2Reliability
If silicon-based chips are used for RFID tags, then current carrying capability and reliability are improved, but manufacturing cost increases significantly
Solution Approach 1:
The patent employs inexpensive organic semiconducting materials that can be processed using low-cost techniques such as printing, replacing expensive silicon-based chips. The material's inherent current limiting property ensures reliable operation without requiring expensive silicon technology
Solution Approach 2:
By modifying the electrical parameters of organic materials through metal complex incorporation, the invention achieves silicon-like reliability in terms of current carrying capability while maintaining the cost advantage of organic materials
3Ease of manufacture
If organic semiconducting materials are used for rectification in RFID systems, then manufacturing cost is reduced, but rectification efficiency and current limiting capability are insufficient
Solution Approach 1:
The patent optimizes the electrical parameters of organic semiconducting materials by incorporating metal complexes with Lewis acid properties. This enhancement enables efficient rectification with inherent current limiting capability, resolving the previous insufficiency while maintaining cost-effectiveness
Solution Approach 2:
The composite structure of organic material with metal complex provides enhanced rectification efficiency and current limiting capability, making organic materials suitable for RFID rectification applications without sacrificing manufacturing cost advantages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material exhibits significant current limiting and increased rectification efficiency, reducing stress on the circuit in the near field of the transmitter and enhancing the current carrying capacity of organic Schottky diodes by several orders of magnitude.
Implementation Method 1
the metal complex being characterized in that it is a metal complex with Lewis acid properties because the Ligands are carboxylic acids or carboxylic acid anions with electron withdrawing substituents
Implementation Method 2
at least one hole-conducting matrix in which a metal complex is embedded
Implementation Method 3
The current carrying capacity of organic Schottky diodes is increased by several orders of magnitude through the use of a doped semiconductor layer
Data Source
Figure 1~2
Figure 3
Figure 4~5
AI summary
The invention relates to a semiconductor material and an organic rectifier diode, such as is used for organic-based RFID (Radio Frequency Identification) tags.