Organic Reflection-Preventing Film for Semiconductor Pattern Formation
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Solution Overview
Problem
The challenge in manufacturing semiconductor devices is forming fine patterns in a limited area with high integration density, where existing technologies face difficulties in achieving the required resolution and pattern fidelity due to the adhesive forces between resist patterns and underlying films.
Innovation Solution
A method involving the use of an organic reflection-preventing film with a polymer having an acid-labile group, where a photoresist film with a photoacid generator is exposed to generate acid, increasing the hydrophilicity of the film's surface, allowing for the selective removal of non-exposed areas and anisotropic etching to form precise patterns without pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a photoresist film is formed directly on a to-be-etched film for fine pattern formation, then the manufacturing process is simple, but the adhesive force between the resist pattern and the underlying film is insufficient causing pattern collapse
Solution Approach 1:
An organic reflection-preventing film is introduced as an intermediary layer between the photoresist film and the to-be-etched film. This intermediate layer includes a polymer with acid-labile groups that, when exposed to acid generated from the photoresist, undergo deprotection to increase surface hydrophilicity, thereby improving adhesive force and preventing pattern collapse while maintaining process feasibility
Solution Approach 2:
The surface properties of the organic reflection-preventing film are dynamically changed through chemical deprotection. The acid-labile groups on the polymer chains are removed by acid diffusion from the exposed photoresist, transforming the surface from hydrophobic to hydrophilic, which enhances adhesion to the photoresist pattern and prevents collapse during development
2Manufacturing precision
If the exposure wavelength is reduced and resolution is increased to form fine patterns in limited area, then the pattern resolution is improved, but it becomes difficult to form multiple fine patterns repeatedly in fine pitch
Solution Approach 1:
The patent converts the harmful effect of light reflection, which normally degrades exposure quality and limits resolution, into a beneficial feature. By using an organic reflection-preventing film with acid-labile groups that respond to exposure-induced acid, the reflection is utilized to enhance local chemical changes at the film surface, improving both resolution and the ability to form multiple fine patterns through mechanisms like self-aligned dual patterning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the formation of fine patterns with improved adhesion and resolution, preventing pattern collapse and ensuring the desired shape and integrity of the resist patterns, even at high aspect ratios and fine pitches.
Implementation Method 1
A first area selected from the photoresist film is exposed to generate an acid in the first area
Implementation Method 2
The increasing hydrophilicity of the first surface may include deprotecting the polymer by removing the acid-labile group in the first surface of the organic reflection-preventing film by using an acid generated from the PAG
Data Source
AI summary
A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.