Organic Semiconductor Device with Auxiliary Electrode Gate Control
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Solution Overview
Problem
Existing organic semiconductor devices with vertical structures face challenges in controlling electrical characteristics for both organic thin film transistors and light-emitting elements, particularly when using metal gate electrodes, and struggle to optimize luminance and quantum efficiency when using organic conductive films.
Innovation Solution
A composite-type organic semiconductor device is designed with a vertical structure where organic semiconductor films are sandwiched between electrodes, and a thin organic conductive film acts as a gate electrode, electrically connected to an auxiliary electrode, allowing for control of electrical characteristics by applying voltage. The organic conductive film is formed to be between 10 nm and 30 nm thick, using materials like poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, ensuring sufficient conductivity and band bending at interfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal gate electrode is used in an organic thin film transistor with vertical structure, then electrical characteristics can be controlled, but optimization of shape for stabilizing element characteristics is difficult
Solution Approach 1:
The patent extracts the gate electrode function from a complex shaped metal electrode and implements it through a simple planar organic conductive film combined with an auxiliary electrode. The organic conductive film is deposited as a uniform thin layer without requiring complex patterning or shape optimization, thereby simplifying the device structure while maintaining electrical control capability.
Solution Approach 2:
The patent introduces an auxiliary electrode as an intermediary element that works in conjunction with the organic conductive film to achieve proper electrical characteristics. The auxiliary electrode compensates for the simplicity of the organic conductive film structure, enabling effective gate control without requiring complex electrode geometry.
2Ease of manufacture
If an organic conductive film is used as gate electrode, then manufacturing is simplified, but electrical characteristics cannot be controlled sufficiently
Solution Approach 1:
The auxiliary electrode serves as a mediator that enhances the electrical control capability of the organic conductive film. By combining the organic conductive film with the auxiliary electrode, the system achieves sufficient electrical characteristic control while retaining the manufacturing simplicity of organic material deposition.
Solution Approach 2:
The gate electrode system is implemented as a composite structure combining organic conductive film and auxiliary electrode. This composite approach leverages the ease of manufacture of organic materials while the auxiliary electrode provides the necessary electrical control, achieving both simplicity and performance.
3Adaptability or versatility
If organic semiconductor layer emits light in composite-type device, then dual functionality is achieved, but luminance and quantum efficiency cannot be controlled sufficiently
Solution Approach 1:
The auxiliary electrode acts as an intermediary that enables sufficient control of luminance and quantum efficiency in the light-emitting organic semiconductor layer. Through the auxiliary electrode, the gate voltage can effectively modulate the electrical characteristics and light emission properties, achieving proper control for display applications.
Solution Approach 2:
The organic semiconductor layer is designed to serve multiple functions: it acts as the active channel in the transistor and simultaneously as the light-emitting layer in the display element. The auxiliary electrode enables this dual functionality by providing the necessary electrical control for both transistor operation and light emission regulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables effective control of current flow and luminance in the organic semiconductor device, allowing for stable electrical characteristics and improved performance as both an organic thin film transistor and a light-emitting element.
Implementation Method 1
since the organic conductive film is formed to cause band bending at the interface between the second organic semiconductor layer and the third organic semiconductor layer
Data Source
AI summary
An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.