Organic Semiconductor Buffer Layer for Voltage Control
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Solution Overview
Problem
In organic semiconductor devices manufactured using photolithography, the aluminum oxide film used as a mask layer can cause damage to the organic layer during processing, leading to increased voltage and potential deterioration of the device, with remaining aluminum oxide films on the surface affecting device performance.
Innovation Solution
Incorporating a buffer layer, such as a metal, organometallic, or organic compound layer, between the organic semiconductor layer and the aluminum oxide film to reduce damage during processing and prevent voltage increase, using a stack of buffer layers for enhanced protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an aluminum oxide film is used as a mask layer for photolithography processing, then the organic layer is less likely to be seriously damaged during formation and removal, but exposing the organic layer to processing conditions for removing the aluminum oxide film for a long time can lead to deterioration of the organic layer
Solution Approach 1:
A buffer layer is introduced as an intermediary between the aluminum oxide mask layer and the organic semiconductor layer. This buffer layer mediates the interaction during processing, allowing the aluminum oxide film to be removed without directly exposing the organic layer to harsh processing conditions, thus preventing both serious damage and gradual deterioration
Solution Approach 2:
The buffer layer is formed beforehand to cushion the organic semiconductor layer from the harmful effects of the aluminum oxide removal process. This preliminary protective measure ensures that when the aluminum oxide film is removed, the organic layer is already shielded from direct exposure to damaging processing conditions
2Reliability
If the aluminum oxide film is not completely removed from the organic layer surface, then the organic layer is protected from processing damage, but the remaining aluminum oxide film leads to an increase in device voltage
Solution Approach 1:
The buffer layer serves as a mediator that enables complete removal of the aluminum oxide film without directly exposing the organic layer to processing conditions. This intermediary approach allows the aluminum oxide to be fully removed (preventing voltage increase) while the buffer layer itself protects the organic layer during the removal process
Solution Approach 2:
The protective function is segmented between two distinct layers: the aluminum oxide mask layer for pattern definition and the buffer layer for organic layer protection. This segmentation allows the aluminum oxide to be completely removed after serving its masking purpose, while the buffer layer remains to protect the organic layer, thus resolving the voltage control issue
Data Source
AI summary
To inhibit an increase in voltage of an organic semiconductor device manufactured by a method including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer. An organic semiconductor device including a first electrode, a second electrode, an organic semiconductor layer, and a buffer layer is provided. The organic semiconductor layer is positioned between the first electrode and the second electrode. The buffer layer is positioned between the organic semiconductor layer and the second electrode. A side surface of the organic semiconductor layer and a side surface of the buffer layer are substantially aligned.