Organic Semiconductor Film Coating Guide for Solvent Evaporation Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for manufacturing organic semiconductor films suffer from reduced quality due to solvent evaporation depositing on crystallized material, leading to redissolution and precipitation, making it difficult to achieve high crystallinity, especially during continuous film formation.
Innovation Solution
A manufacturing device with a coating member and cover portion that forms a liquid reservoir between the substrate and coating member, where the cover portion includes a guide to direct evaporated solvent away from the crystal growth area, and a heating unit to manage solvent evaporation, ensuring high crystallinity and continuous film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the organic semiconductor film is continuously formed by coating, then productivity is improved, but the solvent evaporated during coating deposits on the crystallized material causing redissolution and precipitation, deteriorating film quality
Solution Approach 1:
The harmful evaporated solvent is extracted from the path between the coating member and substrate by introducing a gas flow. This removes the solvent from the system before it can deposit on the crystallized organic semiconductor material, preventing redissolution and maintaining high crystallinity during continuous film formation
Solution Approach 2:
A gas flow is introduced as an intermediary medium between the coating member and substrate. This gas flow carries away the evaporated solvent, acting as a mediator that prevents direct contact between the solvent and crystallized material, thus maintaining film quality during continuous coating
2Manufacturing precision
If the coating member is positioned close to the substrate to form a thin liquid reservoir, then coating precision is improved, but solvent evaporation causes deposit formation that falls on crystallized material
Solution Approach 1:
The evaporated solvent is extracted from the coating region by introducing a gas flow between the coating member and substrate. This prevents the solvent from condensing and depositing on the crystallized material, eliminating the harmful effect while maintaining close positioning for precise coating
Solution Approach 2:
A gas flow is introduced as an intermediary between the coating member and substrate surface. This gas layer prevents direct deposition of evaporated solvent onto the crystallized organic semiconductor material, allowing the coating member to remain close to the substrate for precise coating control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of high-quality organic semiconductor films with high crystallinity by preventing solvent redeposition on the crystallized material, maintaining film quality even at increased temperatures and speeds, thus enhancing productivity.
Implementation Method 1
a coating member 20 that is disposed to face a surface of a substrate 30 to be spaced therefrom for forming an organic semiconductor film and that forms a liquid reservoir 34 of the organic semiconductor solution 36 between the coating member 20 and the substrate 30
Implementation Method 2
while the organic semiconductor solution is supplied to a portion between the coating member and the surface of the substrate by the supply portion, the coating member is moved in a first direction parallel to the surface of the substrate in a state of being in contact with the organic semiconductor solution, to form the organic semiconductor film with the crystal growth portion as a starting point
Implementation Method 3
the cover portion includes a guide to which an evaporated solvent of the organic semiconductor solution is deposited and which guides a deposit formed of the evaporated solvent of the organic semiconductor solution to a film-unformed region
Data Source
AI summary
A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.