Organic Semiconductor Ink-Jet Printing with Crystallization Agents
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Solution Overview
Problem
Current methods for producing organic semiconductor thin films often result in disordered molecular arrangements due to drying processes, leading to undesirable morphologies and performance issues in electronic and optoelectronic devices, which are not compatible with industrial scales or complex applications.
Innovation Solution
A process involving an ink composition with organic semiconductor material, crystallization agents, and solvents is used for ink-jet printing, where the crystallization agent has a melting temperature higher than the substrate temperature and boiling/sublimation temperature higher than the solvent, allowing for controlled molecular orientation and deposition of highly ordered structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If solution processing methods (coating and printing) are used to deposit organic semiconductor materials, then low-cost high-throughput manufacturing is enabled, but a high degree of molecular disorder is introduced resulting in undesired morphologies
Solution Approach 1:
The patent changes the temperature parameter during the deposition process. The substrate is heated to a temperature above the melting point of the organic semiconductor material, enabling the material to crystallize in a highly ordered manner directly from the solution during deposition, thereby achieving both high throughput and molecular order
Solution Approach 2:
The patent utilizes phase transition of the organic semiconductor material from solid to liquid and back to solid crystalline structure. By controlling the substrate temperature above the melting point during deposition, the material undergoes phase transition to form highly ordered crystalline structures directly during the coating process, resolving the contradiction between solution processing and molecular order
2Ease of manufacture
If conventional coating methods are used, then industrial scale production is enabled, but grain boundaries and amorphous regions are formed reducing device performance
Solution Approach 1:
The patent changes the temperature parameter by heating the substrate above the melting point of the organic semiconductor material during deposition. This parameter change enables the formation of highly ordered crystalline structures without grain boundaries or amorphous regions, thereby maintaining both industrial scalability and high device performance
Solution Approach 2:
The patent applies preliminary heating to the substrate before and during the deposition process. This preliminary action of heating the substrate to appropriate temperature ensures that the organic semiconductor material crystallizes in a highly ordered manner as it is deposited, preventing the formation of defects before they can occur
3Manufacturing precision
If mechanical rubbing and shearing methods are used to control molecular orientation, then anisotropic properties are achieved, but the process complexity increases and lateral resolution is insufficient for complex applications
Solution Approach 1:
The patent replaces mechanical rubbing and shearing methods with a thermal field approach. By controlling the substrate temperature above the melting point of the material, the patent achieves molecular orientation and anisotropic properties through thermal effects during deposition, eliminating the need for complex mechanical processing steps
Solution Approach 2:
The patent changes the temperature parameter to achieve molecular orientation. By heating the substrate to a temperature above the melting point of the organic semiconductor material during deposition, the material self-organizes into highly ordered anisotropic structures without requiring mechanical rubbing or shearing, thereby simplifying the process while maintaining precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of electronic and optoelectronic devices with highly ordered fibers, exhibiting anisotropic properties, such as enhanced charge carrier mobilities, and simplifies the production of devices with complex geometries, improving their performance and adaptability.
Implementation Method 1
the crystallization agent has a melting temperature equal to or higher than the substrate temperature
Implementation Method 2
the crystallization agent has a boiling temperature or sublimation temperature equal to or higher than the boiling temperature of the solvent
Implementation Method 3
the crystallization agent has a boiling temperature or sublimation temperature equal to or higher than the boiling temperature of the solvent
Implementation Method 4
one or more solvent; and applying the ink composition to the substrate
Data Source
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AI summary
The present invention relates to a method for the production of electronic or optoelectronic devices with an anisotropic molecular structure of the organic semiconductor material as well as to such electronic or optoelectronic devices comprising an organic semiconductor material with anisotropic molecular structure.The present application further relates to fibers comprising a hollow core and a shell comprising an organic semiconductor material.