Organic Semiconductor Detection Device Leakage Current Reduction

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Solution Overview

Problem

Existing optical biosensors face challenges in achieving high resolution due to leakage currents between detection electrodes, which are exacerbated by the use of organic photoelectric layers across these electrodes.

Innovation Solution

A detection device is designed with a substrate featuring a plurality of detection electrodes, an organic semiconductor layer covering these electrodes, and a counter electrode above the organic semiconductor layer. The organic semiconductor layer includes a p-type and n-type semiconductor layer, with an active layer having a mixed p-type and n-type semiconductor structure in overlapping areas with the detection electrodes, and a non-overlapping area with a p-type or n-type semiconductor layer between adjacent active layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If an organic photoelectric layer is provided across detection electrodes to enable optical detection, then photoelectric conversion function is improved, but leakage current occurs between adjacent detection electrodes

Engineering Contradiction:
Improvephotoelectric conversion functionVSAvoidleakage current
Core Design Contradiction:
Use of energy by moving objectVSObject-generated harmful factors

Solution Approach 1:

The organic photoelectric layer is segmented into multiple independent photoelectric conversion units, each corresponding to one detection electrode. The insulating layer divides the continuous organic layer into discrete sections, preventing charge carrier migration between adjacent electrodes while maintaining photoelectric conversion capability in each unit.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An insulating layer is introduced as an intermediary between the organic photoelectric layer and the detection electrodes. This insulating layer acts as a barrier that blocks leakage current paths between adjacent electrodes while allowing the organic layer to maintain its photoelectric conversion function through optical absorption and charge generation within each segmented unit.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If the organic photoelectric layer spans across multiple detection electrodes, then device integration is improved, but detection resolution deteriorates due to leakage current

Engineering Contradiction:
Improvedevice integrationVSAvoiddetection resolution
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The organic photoelectric layer is divided into discrete photoelectric conversion units aligned with individual detection electrodes. This segmentation ensures that each electrode independently detects light signals without interference from adjacent electrodes, thereby maintaining high detection resolution while preserving device integration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulating layer serves as a mediator that electrically isolates adjacent photoelectric conversion units while allowing them to remain part of the integrated device structure. This isolation prevents cross-talk between electrodes, ensuring that each electrode's detection signal remains pure and resolution is maintained.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If a continuous organic semiconductor layer is used over detection electrodes, then manufacturing simplicity is improved, but leakage current increases between adjacent electrodes

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidleakage current
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The continuous organic semiconductor layer is segmented into discrete photoelectric conversion units by the insulating layer. This segmentation can be achieved through standard fabrication techniques such as patterning or selective deposition, maintaining manufacturing simplicity while effectively preventing leakage current between adjacent electrodes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulating layer is introduced as a thin intermediary barrier that can be deposited using conventional manufacturing processes. This layer effectively blocks leakage current paths without requiring complex rework of the manufacturing process, thus maintaining ease of manufacture while eliminating the harmful leakage effect.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces leakage currents between detection electrodes, enabling higher resolution detection in optical biosensors.

Implementation Method 1

optical biosensors include a photoelectric conversion element, such as a photodiode. The photoelectric conversion element outputs a signal that changes with an amount of irradiating light

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS12310163B2Detection device
Publication Date: 2025.05.20 JAPAN DISPLAY INC
  • US12310163B2 patent drawing
  • US12310163B2 patent drawing
  • US12310163B2 patent drawing

AI summary

A detection device includes a substrate, a plurality of detection electrodes arranged in a detection area of the substrate, an organic semiconductor layer that covers the detection electrodes, and a counter electrode provided above the organic semiconductor layer. The organic semiconductor layer includes at least either of a first p-type semiconductor layer and a first n-type semiconductor layer, and an active layer. The active layer is provided in each overlapping area overlapping a corresponding one of the detection electrodes, and has a structure in which a p-type semiconductor area and an n-type semiconductor area are mixed and coexist. The first p-type semiconductor layer or the first n-type semiconductor layer is provided in a non-overlapping area not overlapping the detection electrode, and is provided between the adjacent active layers.