Organic Single-Crystalline Semiconductor Structure with Growth-Assistant Layer
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Solution Overview
Problem
Current technologies fail to achieve uniform growth and high effective coverage of organic single-crystalline semiconductor thin films on bottom contact structures, leading to reduced device performance and stability, as the rough growth interface and pre-deposited electrodes hinder crystal growth and alignment, making it difficult to achieve complete/full coverage on substrates of arbitrary shape or size.
Innovation Solution
A structure comprising a substrate, growth-assistant layer, and electrodes, where the organic single-crystalline semiconductor layer is grown on the growth-assistant layer and in contact with the electrodes, ensuring uniform growth and high effective coverage by maintaining a smooth interface and using a growth-assistant layer to facilitate crystal growth across electrodes without altering the morphology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If source/drain electrodes are pre-deposited on substrate in bottom contact structure, then device fabrication is enabled, but the rough growth interface and pre-deposited electrodes hinder crystal growth and alignment
Solution Approach 1:
The patent introduces a growth-assistant layer as an intermediary component between the substrate/electrodes and the organic semiconductor layer. This layer serves as a mediator that facilitates uniform crystal growth by providing a smooth template surface, thereby resolving the contradiction between enabling device fabrication and maintaining crystal growth uniformity.
Solution Approach 2:
The growth-assistant layer is prepared in advance before depositing the organic semiconductor layer. This preliminary action creates a pre-conditioned surface that promotes uniform crystal nucleation and growth, addressing the issue of hindered crystal growth caused by pre-deposited electrodes.
2Device complexity
If organic semiconductor layer is grown on pre-deposited electrodes, then device structure is formed, but complete/full coverage on arbitrary substrates cannot be achieved
Solution Approach 1:
The growth-assistant layer serves multiple functions: it acts as a template for crystal growth, provides a smooth interface for uniform deposition, and enables complete coverage on substrates of arbitrary shape or size. This multi-functionality resolves the contradiction between forming device structure and achieving universal coverage.
3Ease of manufacture
If thermal deposition is used to deposit source/drain electrodes, then electrodes are formed, but thermal damage occurs to organic semiconductor layer
Solution Approach 1:
The growth-assistant layer is prepared in advance before electrode deposition and organic semiconductor layer formation. This preliminary structure protects the organic layer from thermal damage during subsequent electrode deposition processes by serving as a thermal barrier and structural template.
4Ease of manufacture
If organic semiconductor layer is directly exposed to air in BGTC devices, then device fabrication is simplified, but device lifetime is affected by environment
Solution Approach 1:
The growth-assistant layer acts as a protective thin film that shields the organic semiconductor layer from environmental factors such as oxygen and moisture. This protective function extends device lifetime while maintaining the simplicity of the bottom contact fabrication process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the preparation of organic single-crystalline semiconductor thin films with uniform morphology and high effective coverage, overcoming the limitations of existing technologies by achieving complete/full coverage on arbitrary substrates, enhancing charge transport and device integration while facilitating large-scale industrial production.
Implementation Method 1
the organic single-crystalline semiconductor layer is grown on the growth-assistant layer and electrodes... ensuring uniform growth and high effective coverage by maintaining a smooth interface and using a growth-assistant layer to facilitate crystal growth
Data Source
AI summary
An organic single-crystalline semiconductor structure is provided. The organic single-crystalline semiconductor structure composes substrate, growth-assisted layer, electrodes, organic single-crystalline semiconductor layer. The growth-assisted layer deposited on the substrate from bottom to top. The organic single-crystalline semiconductor layer is defined as the organic semiconductor single-crystal thin film which basically maintained its original morphology after crossing the electrodes. The organic single-crystalline semiconductor thin film could realize full-covering over the arbitrary-shaped or arbitrary-sized bottom-contacted substrates, and the nearly ideal morphology on industrialized scale could be achieved. This organic single-crystalline semiconductor structure could be applied as key part in organic field-effect transistor, in order to realized fast transportation of charge carriers. A facially manufactured and high performance organic field-effect transistor device is also provided, with good potential in the fields of organic electronics and optoelectronics.