Organic Semiconductor Interface Layer Reduces Contact Resistance
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Solution Overview
Problem
Organic electronic devices face high contact resistance issues at the interface between organic and metal layers, which can lead to increased driving voltage, decreased device performance, and potential circuit damage when multiple devices are aligned, due to the electrical incompatibility and limited material options for improving these characteristics.
Innovation Solution
An organic electronic device is designed with an interface layer comprising a gradient of conductive or semiconductive organic and inorganic materials, where the organic material concentration is higher near the organic layer and the inorganic material concentration is higher near the metal layer, using materials like Ag, Mg, Al, or indium tin oxide to reduce contact resistance and enhance current mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a novel material is introduced between the organic material layer and the metal layer to improve electrical characteristics, then contact resistance is reduced, but the fabrication process becomes complicated
Solution Approach 1:
The patent changes the concentration parameters of organic and inorganic materials within the interface layer to optimize electrical characteristics. By controlling the concentration gradient of organic material from 1-50 nm thickness, the invention reduces contact resistance without adding complex fabrication steps, as the interface layer is formed using the same vacuum deposition process as existing layers
Solution Approach 2:
The interface layer is formed as a composite material containing both organic material (from the organic semiconductor layer) and inorganic material (from the metal electrode layer). This composite structure naturally forms during vacuum deposition and provides improved electrical characteristics without requiring a completely novel material or complex additional processing steps
2Reliability
If the interface between organic material layer and metal layer is improved, then current mobility increases, but the range of available materials is limited
Solution Approach 1:
The patent utilizes parameter changes in material concentration within the interface layer rather than seeking entirely new materials. By adjusting the organic material concentration (1-50 nm) and inorganic material concentration in the existing interface layer, the invention achieves improved current mobility while working within the constraints of available materials
Solution Approach 2:
The interface layer exhibits local quality variations with a concentration gradient of organic material throughout its thickness. This localized optimization at the organic-inorganic interface improves current mobility specifically where needed, without requiring changes to the bulk properties of the organic semiconductor layer or metal electrode
Data Source
AI summary
An organic electronic device including: a first layer including a conductive or semiconductive organic material; a second layer including a conductive or semiconductive inorganic material, and in contact with the first layer; and an interface layer between the first layer and the second layer, wherein the interface layer includes a conductive or semiconductive organic material and a conductive or semiconductive inorganic material.