Organic Semiconductor Polymer Atmospheric Stability

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Solution Overview

Problem

Organic semiconductor elements with existing compounds and polymers tend to have reduced semiconductor characteristics in atmospheric conditions, lacking compatibility between durability and maintaining high carrier mobility without protective layers.

Innovation Solution

A specific polymer with a repeating unit structure, represented by Formula (1), is used in the organic semiconductor film, enhancing carrier mobility and durability by suppressing degradation from oxygen and moisture exposure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing organic semiconductor compounds or polymers are used, then the organic semiconductor element can be manufactured, but the semiconductor characteristics are significantly reduced in atmospheric conditions

Engineering Contradiction:
Improvesemiconductor characteristicsVSAvoiddegradation from oxygen and moisture
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent modifies the chemical structure of the polymer by introducing a specific repeating unit with a 5-membered aromatic heterocyclic ring and a 6-membered aromatic heterocyclic ring connected by a direct bond or single bond. This structural parameter change enhances the polymer's resistance to oxygen and moisture degradation, maintaining high carrier mobility in atmospheric conditions without requiring protective layers.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If protective layers or sealing layers are added to maintain semiconductor characteristics, then durability in the atmosphere improves, but device complexity and manufacturing cost increase

Engineering Contradiction:
Improvedurability in atmosphereVSAvoidprotective layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The polymer itself provides protective functionality through its inherent molecular structure. The specific repeating unit structure with aromatic heterocyclic rings creates a material that is intrinsically resistant to atmospheric degradation, eliminating the need for separate protective or sealing layers. The semiconductor layer serves its own protection function.

Inventive Principle:
Principle #25Self-service

3Ease of manufacture

If existing polymers are used to reduce cost and improve flexibility, then manufacturing ease improves, but compatibility between semiconductor characteristics and durability is poor

Engineering Contradiction:
Improvecost reduction and flexibilityVSAvoidcompatibility between semiconductor characteristics and durability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent creates a composite polymer structure by combining specific heterocyclic ring systems in a repeating unit configuration. This composite molecular architecture integrates both the electrical performance required for semiconductor functionality and the chemical stability needed for atmospheric durability, achieving compatibility between semiconductor characteristics and durability while maintaining the cost and flexibility advantages of polymer materials.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentEP3745484B1Organic semiconductor element, organic semiconductor composition, organic semiconductor film, method for producing organic semiconductor film, and polymer used therefor
Publication Date: 2023.09.27 FUJIFILM CORP
  • EP3745484B1 patent drawingFigure 1~2
  • EP3745484B1 patent drawing
  • EP3745484B1 patent drawing

AI summary

Provided are an organic thin film transistor element comprising an organic semiconductor layer containing a specific polymer which has a repeating unit including a structure represented by a specific formula, an organic semiconductor film suitable as the organic semiconductor layer and a method of manufacturing the same, and a polymer and a composition suitable as a constituent material of the organic semiconductor film.