Organic Semiconductor Device Manufacturing Using Sacrificial Layer
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Solution Overview
Problem
Current methods for manufacturing organic semiconductor devices are complex due to the need for additional organic coating and thermal evaporation processes using a copper mask, which complicate the protection of the organic semiconductor layer.
Innovation Solution
A method involving a substrate with a sacrificial layer, patterned surface treatment, formation of a patterned lyophobic area and organic semiconductor layer, an insulating layer, gate electrode, separation from the substrate, and source/drain electrodes, where the patterns are complementary or the same, using fluorine-containing gases and octadecyltrichlorosilane for surface treatment, and forming an organic substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a copper mask with additional organic coating and thermal evaporation processes is used to protect the organic semiconductor layer, then the protection effectiveness is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent extracts and removes the copper mask and its associated organic coating and thermal evaporation processes from the manufacturing method. Instead of using a copper mask for protection, the invention uses a sacrificial layer that is selectively removed to define the semiconductor layer pattern, eliminating the need for complex mask-based protection processes while maintaining effective protection during manufacturing.
Solution Approach 2:
The patent applies preliminary action by forming a sacrificial layer before forming the organic semiconductor layer. This sacrificial layer serves as a temporary protective and patterning structure that guides the formation of the semiconductor layer and is subsequently removed. This preliminary structuring eliminates the need for subsequent mask-based protection steps.
2Reliability
If a copper mask with additional organic coating and thermal evaporation processes is used to protect the organic semiconductor layer, then the protection effectiveness is improved, but the manufacturing time increases
Solution Approach 1:
The patent extracts and removes the copper mask and its associated organic coating and thermal evaporation processes from the manufacturing method. Instead of using a copper mask for protection, the invention uses a sacrificial layer that is selectively removed to define the semiconductor layer pattern, eliminating the need for complex mask-based protection processes while maintaining effective protection during manufacturing.
Solution Approach 2:
The patent applies preliminary action by forming a sacrificial layer before forming the organic semiconductor layer. This sacrificial layer serves as a temporary protective and patterning structure that guides the formation of the semiconductor layer and is subsequently removed. This preliminary structuring eliminates the need for subsequent mask-based protection steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, effectively protects the organic semiconductor layer, and enhances efficiency in producing flexible electronic devices by using patterned nano silver wires or carbon nanotubes as electrodes.
Implementation Method 1
etching the sacrificial layer by using a fluorine-containing gas
Implementation Method 2
performing the patterned surface treatment to the sacrificial layer by using octadecyltrichlorosilane
Data Source
AI summary
A method of manufacturing an organic semiconductor device is provided. The method includes providing a substrate, forming a sacrificial layer on the substrate, forming a patterned organic semiconductor layer on the sacrificial layer, forming an insulating layer on the patterned organic semiconductor layer, forming a gate electrode on the insulating layer, separating the sacrificial layer and the substrate from the patterned organic semiconductor layer, and forming a source/drain electrode on the patterned organic semiconductor layer, so as to provide a simple and effective method of manufacturing the organic semiconductor device.