Organic Silicon Seed Layer for Uniform Polysilicon Films
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Solution Overview
Problem
The challenge in semiconductor memory device fabrication is to achieve higher integration while maintaining process margin and optimizing components, which is hindered by down-sizing leading to increased difficulty in forming uniform and defect-free thin films on substrates with dangling bonds and defects.
Innovation Solution
A method involving the formation of a silicon seed layer using an organic silicon source followed by deposition of a polysilicon film with an inorganic silicon source, allowing for the creation of a thin silicon film with improved thickness uniformity and surface morphology, achieved by chemically adsorbing silicon seed particles on the substrate and using a higher temperature for inorganic silicon deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If down-sizing is implemented to achieve higher integration, then integration density is improved, but manufacturing precision deteriorates due to increased difficulty in forming uniform thin films
Solution Approach 1:
The patent applies preliminary action by first forming a silicon seed layer on the substrate before depositing the final silicon film. This seed layer preparation step addresses surface defects and dangling bonds in advance, creating a better foundation for subsequent thin film deposition and improving overall film uniformity at scaled dimensions.
Solution Approach 2:
The silicon seed layer acts as an intermediary between the substrate and the final silicon film. It mediates the interaction by providing a controlled interface that reduces the direct impact of substrate defects on the final film quality, enabling better manufacturing precision at smaller scales.
2Area of moving object
If thin film thickness is reduced to increase integration, then integration density is improved, but reliability deteriorates due to increased difficulty in maintaining defect-free films
Solution Approach 1:
The seed layer formation performs preliminary action by addressing surface preparation and defect mitigation before the main thin film deposition. This preliminary step ensures that the subsequent ultra-thin film can be formed with fewer defects, maintaining reliability even at reduced thicknesses.
Solution Approach 2:
The patent employs parameter changes by using different deposition conditions for the seed layer versus the final silicon film. By optimizing parameters such as deposition temperature, pressure, and material composition for each layer, the process achieves better control over film quality and reduces defects in the final thin film structure.
3Device complexity
If conventional single-step deposition is used, then process complexity is reduced, but manufacturing precision deteriorates due to inability to achieve uniform thin films on defective substrates
Solution Approach 1:
The deposition process is segmented into two distinct steps: seed layer formation followed by silicon film deposition. This segmentation allows each step to be optimized independently for its specific function, with the seed layer step addressing surface preparation and the second step focusing on achieving uniform thin film quality, thereby improving manufacturing precision without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of a polysilicon film with a thickness ranging from 1 nm to 10 nm, enhancing integration density and electrical characteristics by reducing defects and improving surface roughness, thus facilitating higher integration of semiconductor devices.
Implementation Method 1
supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer
Implementation Method 2
supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon seed particles
Data Source
AI summary
Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.