Organic-Soluble Capping Layer for Semiconductor Photoresist Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for forming semiconductor device patterns face challenges in achieving micro-sized patterns with reduced critical dimensions due to limitations in negative tone development processes and chemical attachment using water-soluble capping layers, which result in low etch resistance and increased facility costs.
Innovation Solution
A method involving the formation of a photoresist layer with an acid generator and a first resin having an acid-labile group, followed by negative development using an organic solvent, and subsequent coating and baking of a capping composition without an acid generator, which includes a second resin and organic solvent, to create a capping layer on the photoresist pattern, enhancing etch resistance and allowing in-line processing in a photolithography apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If water-soluble capping layers are used for chemical attachment, then the capping layer can be easily formed and removed, but the etch resistance is low and facility costs increase
Solution Approach 1:
The patent changes the solubility parameter of the capping layer by using organic-soluble polymers instead of water-soluble polymers. This allows the capping layer to be formed and removed using organic solvents while maintaining high etch resistance, thus resolving the contradiction between ease of manufacture and etch resistance
Solution Approach 2:
The patent uses composite material composition for the capping layer by combining organic-soluble polymers with specific functional groups that provide both organic solvent solubility and high etch resistance. This composite approach enables the capping layer to satisfy both ease of removal and etch resistance requirements
2Manufacturing precision
If negative tone development is used to reduce critical dimensions, then micro-sized patterns can be formed, but the process complexity increases
Solution Approach 1:
The patent merges the capping layer formation process with the existing negative tone development process by using the same organic solvent for both developing the photoresist and dissolving the capping layer. This integration reduces process complexity while maintaining the ability to form micro-sized patterns with reduced critical dimensions
3Strength
If thicker capping layers are formed to improve etch resistance, then etch protection is enhanced, but the development time and process duration increase
Solution Approach 1:
The patent changes the chemical composition parameter of the capping layer to use organic-soluble polymers with specific functional groups that provide rapid dissolution in organic solvents. This allows thicker capping layers to be formed for enhanced etch resistance while maintaining fast removal speed, thus resolving the contradiction between etch resistance and process throughput
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves process throughput and reduces critical dimensions by forming a thicker capping layer with enhanced etch resistance, enabling the creation of micro-sized semiconductor device patterns within the resolution limits of photolithography, while preventing degradation during developing processes.
Implementation Method 1
forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer
Implementation Method 2
coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent
Implementation Method 3
The capping layer may be deprotected by acid diffused from the photoresist pattern, to be attached on the upper and side surfaces of the photoresist pattern
Implementation Method 4
by baking the capping composition and developing the capping composition
Data Source
AI summary
A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.