Organic Solvent Developer Resist Film for Low LWR
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Solution Overview
Problem
Current pattern forming methods for semiconductor and liquid crystal device production face challenges in achieving excellent line width roughness, local pattern dimension uniformity, exposure latitude, and reducing film loss during the development process, especially with the increasing complexity of miniaturization and the need for shorter wavelength exposure sources.
Innovation Solution
A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition containing a specific resin with a repeating unit capable of generating an organic acid upon irradiation, combined with an organic solvent-containing developer, to enhance dissolution contrast and reduce film loss, while maintaining high performance in roughness and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an aqueous alkali developer is used for general purposes, then the development process is simple and widely applicable, but line width roughness and local pattern dimension uniformity deteriorate
Solution Approach 1:
The patent changes the fundamental parameter of developer composition from aqueous to organic solvent-based, specifically using solvents like cyclohexanone, 2-heptanone, or their mixtures. This parameter change enables achievement of excellent line width roughness (LWR) and local pattern dimension uniformity while maintaining manufacturing feasibility through established organic solvent handling procedures
Solution Approach 2:
The patent employs composite resin compositions containing multiple components including compounds with carboxyl groups, compounds with hydroxyl groups, and organic solvent developers. This composite approach combines the benefits of different material properties to achieve both low LWR and good pattern uniformity that cannot be obtained with single-component systems
2Manufacturing precision
If the exposure wavelength is shortened for miniaturization, then resolution improves, but film loss during development increases
Solution Approach 1:
The patent modifies the chemical composition parameters of the resist film to include specific compounds with carboxyl groups and hydroxyl groups in controlled ratios. These compositional changes enhance the film's chemical stability and dissolution selectivity, reducing film loss during development while maintaining the high resolution enabled by shorter exposure wavelengths
Solution Approach 2:
The organic solvent developer acts as an intermediary that mediates between the exposed and unexposed regions of the resist film. The specific organic solvents used provide selective dissolution that preserves the patterned film structures while removing unexposed material, thereby reducing overall film loss during the development process
3Manufacturing precision
If an organic solvent-containing developer is used, then line width roughness improves, but development process complexity increases
Solution Approach 1:
The patent simplifies the development process by selecting organic solvents with favorable properties such as cyclohexanone and 2-heptanone, which provide excellent LWR results while having acceptable handling characteristics. The process complexity is managed by optimizing solvent selection rather than requiring complex multi-step development procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves improved line width roughness, local pattern dimension uniformity, and exposure latitude, while minimizing film loss, thereby enhancing the overall performance of the pattern formed.
Implementation Method 1
a compound (B) capable of generating an organic acid upon irradiation with an actinic ray or radiation
Data Source
Figure 1
AI summary
A pattern forming method contains (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a) a repeating unit represented by the specific formula, and (B) a compound capable of generating an organic acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, and (iii) a step of developing the film by using an organic solvent-containing developer to form a negative pattern.