Organic Solvent Developer Rinsing for Semiconductor Pattern Defects
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Solution Overview
Problem
The existing pattern forming methods using organic solvent-containing developers in semiconductor manufacturing face challenges in achieving high-precision fine patterns due to defects such as residue-type and blob defects, particularly during the drying process of liquid droplets on hydrophobic resist surfaces.
Innovation Solution
A pattern forming method involving a resist composition that includes a resin capable of increasing polarity upon acid action, combined with an exposure and development process using an organic solvent-containing developer, and a rinsing solution containing specific solvents like alcohols or dialkyl ethers to reduce defects and enhance precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an organic solvent-containing developer is used for pattern formation, then the ability to form fine patterns by selectively dissolving low exposure regions is improved, but defects such as residue-type and blob defects occur during the drying process
Solution Approach 1:
A rinsing solution is introduced as an intermediary between the organic solvent-containing developer and the drying process. This rinsing solution removes residual developer from the resist film surface, preventing the formation of blob defects and residue-type defects during drying, while preserving the fine pattern formation capability achieved by the organic solvent-based development
Solution Approach 2:
The invention changes the solvent parameters by selecting specific solvents (alcohols with 3-7 carbon atoms or ethers with specific structures) for the rinsing solution. These parameter changes optimize the rinsing effectiveness to remove organic solvent residues without causing pattern collapse or defect formation, thereby resolving the contradiction between fine pattern formation and defect reduction
2Loss of substance
If a conventional rinsing solution is used after organic solvent-based development, then the developer removal is insufficient, but using stronger rinsing agents may cause pattern damage or additional defects
Solution Approach 1:
The invention optimizes the rinsing solution parameters by selecting specific solvents (alcohols with 3-7 carbon atoms or ethers with specific structures) that have appropriate solubility parameters for removing organic solvent residues. These parameter changes enable effective developer removal while maintaining pattern integrity, resolving the contradiction between removal efficiency and pattern protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces defects and enables the formation of high-precision fine patterns by improving the solubility characteristics of the resist film, allowing for stable and precise pattern formation in semiconductor manufacturing.
Implementation Method 1
a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) in an organic solvent-containing developer
Implementation Method 2
a compound capable of generating an acid upon irradiation with an actinic ray or radiation
Implementation Method 3
a rinsing solution containing at least either the following solvent S1 or S2... effectively reduces defects and enables the formation of high-precision fine patterns by improving the solubility characteristics of the resist film
Data Source
Figure 1(a)~1(b)
Figure 2
Figure 3(a)~3(b)
AI summary
A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used.