Organic TFT Self-Assembled Monolayer Patterning

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Solution Overview

Problem

The manufacturing of organic thin film transistors (TFTs) requires additional patterning of the organic semiconductor layer, which degrades the material and damages underlying film layers, leading to deteriorated electric properties and increased costs and time.

Innovation Solution

A method where a hydrophobic layer is formed with an opening corresponding to the organic semiconductor layer, and a hydrophilic layer is created within this opening, allowing the organic semiconductor layer to be spontaneously formed without additional patterning, using a material that is attracted to the hydrophilic layer and repelled by the hydrophobic layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If additional patterning of the organic semiconductor layer is performed, then the organic semiconductor layer can be formed in a specific region, but the material is degraded and underlying film layers are damaged

Engineering Contradiction:
Improvepattern precision of organic semiconductor layerVSAvoidelectric properties of organic TFT
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by forming the hydrophilic layer and hydrophobic layer with openings before depositing the organic semiconductor layer. The openings are pre-formed in the self-assembled monolayer structure, guiding the organic semiconductor material to deposit only in desired regions without requiring subsequent patterning that would damage the material or underlying layers.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses self-assembled monolayers (hydrophilic and hydrophobic layers) as intermediary structures that control the deposition of the organic semiconductor layer. These monolayer intermediaries create a template effect, allowing the organic semiconductor material to self-organize and deposit only in specific regions defined by the monolayer pattern, eliminating the need for harmful additional patterning processes.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If additional patterning of the organic semiconductor layer is performed, then the organic semiconductor layer can be formed in a specific region, but manufacturing cost and time increase

Engineering Contradiction:
Improvepattern precision of organic semiconductor layerVSAvoidmanufacturing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent performs preliminary patterning by forming the hydrophilic and hydrophobic self-assembled monolayer structures with openings before organic semiconductor deposition. This preliminary structure creation enables the organic semiconductor layer to be automatically patterned during deposition without requiring additional time-consuming patterning steps, thereby improving manufacturing efficiency while maintaining precision.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements self-service by designing a self-assembled monolayer structure that automatically guides the organic semiconductor material deposition. The hydrophilic and hydrophobic regions self-organize to create a template that directs material deposition without external intervention or additional patterning processes, reducing both manufacturing time and cost while achieving precise patterning.

Inventive Principle:
Principle #25Self-service

3Productivity

If a self-assembled monolayer structure with hydrophilic and hydrophobic layers is formed, then additional patterning is eliminated, but the structure complexity increases

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidstructure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent merges multiple functions into the self-assembled monolayer structure. The hydrophilic and hydrophobic layers serve simultaneously as protective layers, patterning templates, and deposition guides. This consolidation of multiple functions into a single integrated structure achieves the desired patterning while actually reducing overall process complexity compared to sequential separate patterning steps.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent utilizes parameter changes in the self-assembled monolayer structure, specifically the hydrophilic-hydrophobic surface energy parameters, to control organic semiconductor deposition. By changing the surface energy characteristics of different regions, the patent achieves spatially selective deposition without additional structural complexity or processing steps.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces manufacturing costs and time by eliminating the need for additional patterning, while improving the electric properties of the TFTs, resulting in a more efficient and reliable production process for flat panel displays.

Implementation Method 1

a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer

Methodology Applied
Scientific EffectHydrophile: Hydrophile

Implementation Method 2

a hydrophobic layer having an opening that defines a region corresponding to the organic semiconductor layer

Methodology Applied
Scientific EffectHydrophobe: Hydrophobe

Data Source

PatentUS8207529B2Thin film transistor and flat panel display having the thin film transistor
Publication Date: 2012.06.26 SAMSUNG DISPLAY CO LTD
  • US8207529B2 patent drawing
  • US8207529B2 patent drawing
  • US8207529B2 patent drawing

AI summary

A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.