Organic TFT Panel with Fluorine Insulation Layer

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Solution Overview

Problem

Organic thin film transistors are prone to damage during manufacturing processes, affecting the electrical characteristics of the thin film transistor panel.

Innovation Solution

A thin film transistor panel structure is developed with a fluorine-containing organic insulation layer and a photosensitive organic insulation layer, where the fluorine-containing layer covers the organic semiconductor to prevent thermal degradation and the photosensitive layer protects against subsequent process damage, with both layers formed at low temperatures and used to pattern the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional manufacturing processes are used for organic thin film transistors, then the manufacturing process can be completed, but the organic semiconductor layer is easily damaged and electrical characteristics are affected

Engineering Contradiction:

Improveelectrical characteristics of thin film transistorVSAvoiddamage to organic semiconductor layer

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A fluorine-containing organic insulation layer is introduced as an intermediary protective layer between the organic semiconductor layer and the subsequent manufacturing processes. This layer acts as a buffer that prevents direct exposure of the organic semiconductor to damaging conditions during wet etching and other processing steps, thereby reducing damage while allowing the manufacturing process to proceed

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The fluorine-containing organic insulation layer is formed in advance before subsequent manufacturing steps such as wet etching of the photosensitive organic insulation layer. This preliminary protective layer is prepared beforehand to shield the organic semiconductor from upcoming process damage, enabling the manufacturing to continue without compromising the organic semiconductor integrity

Inventive Principle:

Principle #10Preliminary action

2Reliability

If protective layers are added to prevent damage to organic semiconductor, then damage is reduced, but the device structure becomes more complex

Engineering Contradiction:

Improvedamage resistance of organic semiconductor layerVSAvoidstructure of thin film transistor panel

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The fluorine-containing organic insulation layer is designed with specific thickness parameters (about 0.1 μm to about 1.0 μm) and material composition parameters that optimize its protective function while minimizing structural complexity. By carefully controlling these parameters, the layer provides effective protection without adding excessive complexity to the overall device structure

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS9484542B2Thin film transistor panel and method of manufacturing the same, and electronic device including the thin film transistor panel

Publication Date: 2016.11.01 SAMSUNG ELECTRONICS CO LTD

AI summary

A thin film transistor panel includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, an organic semiconductor overlapping with the gate electrode, a source electrode and a drain electrode electrically connected to the organic semiconductor, a fluorine-containing organic insulation layer covering the organic semiconductor, and a photosensitive organic insulation layer covering the fluorine-containing organic insulation layer.