Organic Thin Film Transistor Self-Assembly Monolayer Patterning
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Solution Overview
Problem
Conventional patterning methods for organic semiconductors in TFTs are damaging and ineffective, leading to cross-talk and leakage currents in flexible display devices, as they cannot be processed at low temperatures and are not compatible with plastic substrates.
Innovation Solution
The use of a self-assembly monolayer on source and drain electrodes, combined with inkjet printing of organic semiconductor materials, allows for precise patterning of the organic semiconductor layer, reducing contact resistance and preventing cross-talk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography patterning is used on organic semiconductors, then patterning precision is improved, but the organic semiconductor layer is damaged due to high temperature processing requirements
Solution Approach 1:
The patent changes the temperature parameter from high temperature (conventional photolithography) to low temperature processing, making the patterning process compatible with organic semiconductor materials that cannot withstand high temperatures while still achieving effective patterning
Solution Approach 2:
The patent introduces an intermediary patterning approach that uses low temperature processing methods instead of direct photolithography, allowing the organic semiconductor to be patterned without direct exposure to high temperature conditions that would damage it
2Manufacturing precision
If conventional wet and dry etching is used to pattern organic semiconductors, then patterning capability is improved, but the organic semiconductor is damaged
Solution Approach 1:
The patent extracts the harmful etching processes (wet and dry etching) from the patterning sequence and replaces them with a gentler low temperature patterning method that achieves the same patterning capability without the damaging effects
Solution Approach 2:
The patent employs a disposable low temperature patterning approach that uses materials and processes designed for single-use at low temperatures, avoiding the need for durable high temperature etching processes that would damage the organic semiconductor
3Device complexity
If organic semiconductor layer is not patterned, then manufacturing complexity is reduced, but cross-talk and leakage currents occur between adjacent electronic components
Solution Approach 1:
The patent segments the organic semiconductor layer into distinct patterned regions using low temperature processing, creating electrical isolation between adjacent components that prevents cross-talk and leakage currents while maintaining manufacturing simplicity
Solution Approach 2:
The patent uses a simplified patterning approach that copies the essential isolation function of complex patterning methods, achieving the same electrical isolation effect with reduced manufacturing complexity through low temperature processing
4Adaptability or versatility
If plastic substrates are used to achieve flexibility, then adaptability is improved, but high temperature processing cannot be used
Solution Approach 1:
The patent changes the processing temperature parameter from high temperature to low temperature to match the thermal constraints of plastic substrates, enabling flexibility while maintaining process compatibility
Solution Approach 2:
The patent inverts the conventional approach by not adapting the substrate to high temperature processing, but instead adapting all processing methods to suit the low temperature requirements of the flexible plastic substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient patterning of organic semiconductors, reducing leakage currents and improving device characteristics in flexible display devices by using a self-assembly monolayer to guide the positioning of the organic semiconductor layer between source and drain electrodes.
Implementation Method 1
a self-assembly monolayer formed on the source and drain electrodes
Data Source
AI summary
An organic thin film transistor (TFT) that allows an organic semiconductor layer to be easily patterned includes a gate electrode, source and drain electrodes insulated from the gate electrode, a self-assembly monolayer formed on the source and drain electrodes, an organic semiconductor layer which is insulated from the gate electrode and covers at least a portion of the self-assembly monolayer. A flat panel display apparatus includes the organic TFT. A method of manufacturing an organic TFT includes forming source and drain electrodes on a substrate; forming a self-assembly monolayer covering at least the source and drain electrodes; patterning the self-assembly monolayer to remove portions of the self-assembly monolayer that are not located on the source and drain electrodes; and forming an organic semiconductor layer by inkjet printing an organic semiconductor material between the source and drain electrodes.