Organic Thin Film Transistor Self-Patterning via Backside Light Irradiation
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Solution Overview
Problem
The production of organic thin film transistors for flexible display devices is complex and costly due to the need for additional surface treatment processes, and it faces challenges with leakage current.
Innovation Solution
The use of a dual gate electrode structure with a gate insulating layer, source and drain electrodes, and an organic semiconductor layer, where the organic semiconductor layer is formed on the source and drain electrodes and partially overlaps the gate electrode, and light is irradiated onto the backside of the substrate to self-pattern the semiconductor layer, eliminating the need for an additional patterning process and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an additional surface treatment process is used for patterning the organic semiconductor layer, then the organic thin film transistor can be formed, but the production complexity and cost increase
Solution Approach 1:
The invention extracts and eliminates the additional surface treatment process from the fabrication sequence by using the self-patternable property of the organic semiconductor layer, which can be directly patterned through photolithography without requiring preliminary surface modification steps
Solution Approach 2:
The organic semiconductor layer exhibits self-patternable characteristics that allow it to be directly patterned through standard photolithography processes, making the layer serve its own patterning function without requiring external surface treatment processes
2Reliability
If an additional surface treatment process is used for patterning the organic semiconductor layer, then the organic thin film transistor can be formed, but the production cost increases
Solution Approach 1:
The invention removes the costly surface treatment step from the fabrication process by utilizing the inherent self-patternable property of the organic semiconductor layer, which can be directly patterned using standard, cost-effective photolithography techniques
Solution Approach 2:
The invention employs standard photolithography materials and processes that are inexpensive and widely available, replacing the need for expensive specialized surface treatment processes while achieving the same patterning function
3Reliability
If light is irradiated onto the backside of the substrate to self-pattern the semiconductor layer, then the leakage current is reduced, but the fabrication process requires precise light control
Solution Approach 1:
The invention inverts the conventional approach by irradiating light onto the backside of the substrate rather than the front side, allowing the light to pass through the substrate and selectively deactivate the organic semiconductor layer in the inter electrode region, thereby reducing leakage current through a simplified single-sided irradiation process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, reduces production costs, and effectively suppresses leakage current by deactivating semiconductor properties in specific areas of the organic semiconductor layer, enhancing the overall device characteristics.
Implementation Method 1
irradiating light onto a backside of the substrate
Data Source
AI summary
An organic thin film transistor includes a dual gate electrode on a substrate, a gate insulating layer on the dual gate electrode, source and drain electrodes on the gate insulating layer, and an organic semiconductor layer on the source and drain electrodes.