Organic Thin Film Transistor Modified Electrode Layer
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Solution Overview
Problem
The large contact angle on electrode layers in organic thin film transistors leads to poor spreading and non-uniform thickness of the organic semiconductor layer, causing disconnection issues and affecting the performance and production costs of thin film transistors.
Innovation Solution
A modified layer, made from organic micromolecular materials like hexamethyl disilazane or octyltrichlorosilane, is applied below the organic semiconductor layer on the source and drain electrodes to reduce the contact angle, ensuring uniform formation and full contact with the electrodes, thereby improving the stability and performance of the transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a large contact angle is used on electrode layers, then the organic semiconductor layer formation is simpler, but the organic semiconductor layer becomes non-uniform and disconnected
Solution Approach 1:
A modified layer is introduced as an intermediary between the electrode layer and the organic semiconductor layer. This modified layer, formed by treating the electrode surface with organic micromolecular materials (such as hexamethyl disilazane or octyltrichlorosilane), mediates the interaction between the electrode and semiconductor layer, reducing the contact angle and enabling uniform semiconductor layer formation without disconnection.
Solution Approach 2:
The contact angle parameter of the electrode surface is changed through chemical modification. By treating the electrode layer with specific organic micromolecular materials, the surface energy and wettability are altered, transforming the contact angle from a large value (causing disconnection) to a smaller value (enabling uniform coverage).
2Device complexity
If the organic semiconductor layer is formed directly on the electrode, then the device structure is simpler, but the transistor performance and stability deteriorate
Solution Approach 1:
The modified layer serves as an intermediary interface that improves the reliability of the transistor. Although it adds a layer to the structure, it significantly enhances the interfacial properties between the electrode and organic semiconductor layer, leading to better charge injection, improved device stability, and higher overall transistor performance.
Solution Approach 2:
The electrode structure is transformed into a composite structure consisting of the original electrode layer plus the modified layer formed by organic micromolecular materials. This composite electrode structure combines the electrical conductivity of the metal electrode with the surface properties of the organic modifier, achieving both good electrical performance and improved interface characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modified layer ensures uniform formation of the organic semiconductor layer, preventing disconnection and improving the quality and performance of the thin film transistor while reducing production costs by avoiding material waste.
Implementation Method 1
the modified layer is configured to change a contact angle on both the source electrode and the drain electrode
Data Source
AI summary
An organic thin film transistor and a method of manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor including: a source electrode (4), a drain electrode (5), an organic semiconductor layer (6) disposed on the source electrode (4) and drain electrode (5), and a modified layer (7); the modified layer (7) is disposed at a position below an organic semiconductor layer (6) and corresponding to the source electrode (4) and the drain electrode (5), covers the source electrode (4) and the drain electrode (5), and is configured to change a contact angle on both the source electrode (4) and the drain electrode (5). The thin film transistor avoids the problems of poor formation effects and easy disconnection of the organic semiconductor layer (6) because of the large contact angle on electrode layers, and therefore reduces production costs.