Organic Thin Film Transistor Electrical Characterization at Elevated Temperatures
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Solution Overview
Problem
Current methods for determining electrical characteristics of organic thin film transistors are either overly complex due to numerous fitting parameters or unsuitable for operating temperatures above room temperature, limiting their applicability in display devices.
Innovation Solution
A method that determines mobility characteristics of carriers and electrical characteristics of transistors based on material and structural properties, using equations such as μ(T)=μ0×exp[-Ea/(kB*T-1kB*T0) and n=∫-∞+∞N2πσ2exp(-E22σ2)f(E)dE, to accurately calculate field effect mobility, carrier concentration, electric field distribution, and drain current as a function of gate voltage, applicable at room temperature and above.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional simulation models with numerous fitting parameters are used, then model accuracy can be improved, but device complexity and measurement difficulty increase
Solution Approach 1:
The patent extracts and removes the numerous fitting parameters from conventional simulation models, retaining only the essential physical parameters (mobility, threshold voltage, subthreshold swing) that directly characterize transistor behavior. This simplification maintains measurement precision while significantly reducing model complexity and making the models more suitable for high-temperature operation.
Solution Approach 2:
The patent changes the parameter set used in simulation models from conventional fitting parameters to physically meaningful parameters that can be directly measured and that maintain their significance across different temperature conditions. This parameter transformation enables accurate modeling without requiring complex temperature-dependent fitting procedures.
2Measurement precision
If conventional models are used for high-temperature operation, then room-temperature accuracy is maintained, but applicability at elevated temperatures deteriorates
Solution Approach 1:
The patent creates universal simulation models that function accurately across a wide temperature range (room temperature and elevated temperatures up to 85°C or higher). The models achieve this by using temperature-independent physical parameters and incorporating temperature effects through fundamental physics relationships rather than empirical fitting, making them universally applicable to organic thin-film transistor operation conditions.
Solution Approach 2:
The patent transforms the model parameters from temperature-dependent fitting parameters to temperature-independent physical parameters. By using parameters such as carrier mobility, threshold voltage, and subthreshold swing that can be measured at room temperature and remain valid at elevated temperatures, the models gain versatility for high-temperature operation while maintaining room-temperature accuracy.
Data Source
AI summary
Disclosed are a method and apparatus for determining electrical characteristics of a transistor, and a computer-readable storage medium. The method for determining electrical characteristics of a transistor includes: determining mobility characteristics of carriers in channels of the transistor at a transistor operating temperature condition; and determining electrical characteristics of the transistor based on the mobility characteristics of the carriers, semiconductor material properties of the transistor, and structural features of the transistor.