Organic Underlayer Film Compound Curing Without Volatile Byproducts
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in forming organic underlayer films that are durable for dry etching and heat-resistant, while also preventing substrate corrosion under inert gas conditions, especially at high temperatures, and maintaining planarization and gap filling characteristics.
Innovation Solution
A compound with specific molecular structures, capable of forming a ring structure with aromatic substituents and carbon-carbon triple bonds, is used to create an organic film that can cure in both air and inert gases without volatile byproducts, providing excellent dry etching durability and heat resistance, and is synthesized without transition metal catalysts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic resin compositions are used to form organic underlayer films, then the films can be formed easily, but they lack sufficient dry etching durability and heat resistance for high-temperature inert gas processing
Solution Approach 1:
The patent modifies the chemical structure of organic resin molecules by introducing specific functional groups (carboxyl, hydroxyl, amino groups) and controlling molecular weight ranges (500-20,000 Da), which fundamentally changes the film's thermal and etching resistance properties while maintaining ease of deposition through conventional coating methods
Solution Approach 2:
The invention creates composite organic film structures by combining multiple resin components with specific functional groups, achieving synergistic effects that provide both excellent dry etching durability and heat resistance while remaining compatible with standard manufacturing processes
2Manufacturing precision
If high-temperature processing is performed in inert gas to improve film quality, then film integrity is enhanced, but substrate corrosion occurs due to oxygen depletion
Solution Approach 1:
The patent formulates organic resin compositions that are specifically designed to be stable and non-corrosive to substrates under inert gas conditions, converting the previously harmful inert atmosphere into a beneficial processing environment that enables high-temperature treatment without substrate damage
3Productivity
If transition metal catalysts are used in compound synthesis, then reaction efficiency is improved, but metal contamination occurs in the final product
Solution Approach 1:
The patent removes transition metal catalysts from the synthesis process entirely, replacing them with alternative catalytic systems or purification methods that eliminate metal contamination while maintaining efficient reaction rates in the production of organic film-forming compounds
4Duration of action of moving object
If volatile byproducts are generated during film curing, then curing reaction proceeds rapidly, but film purity and integrity deteriorate
Solution Approach 1:
The patent modifies the curing chemistry by selecting resin compositions and crosslinking mechanisms that proceed through non-volatile reaction pathways, maintaining rapid curing speeds while producing films with high purity and integrity free from volatile byproduct contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound enables the formation of organic underlayer films with enhanced gap filling and planarizing properties, maintaining film integrity during high-temperature processing and preventing substrate corrosion, thus improving semiconductor device yield and performance.
Implementation Method 1
capable of curing under the film forming conditions that is not only in air but also in an inert gas without forming volatile byproducts
Implementation Method 2
favorable characteristics of gap filling and planarizing a pattern formed on a substrate
Implementation Method 3
planarizing a pattern formed on a substrate
Data Source
Figure 1~2(F)
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AI summary
The present invention provides a compound including two or more structures shown by the following general formula (1-1) in the molecule, wherein "Ar" represents an aromatic ring or an aromatic ring that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film that has good dry etching durability in substrate processing as well as excellent heat resistance and gap filling/planarizing characteristics of a pattern formed on a substrate.