Organic Underlayer Film Composition for Fine Pattern Transfer
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Solution Overview
Problem
Existing photoresist compositions face challenges with reduced resolution performance and pattern collapse due to increased aspect ratios as patterns miniaturize, and lack of etching selectivity between the resist film and substrate, leading to resist film damage and incomplete pattern transfer.
Innovation Solution
A compound with a specific general formula is used to form an organic film that exhibits excellent heat resistance, filling, and planarizing properties, combined with a 3-layer or 4-layer resist process to enhance pattern transfer precision, using a silicon-containing resist middle layer film and an organic antireflective coating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the photoresist film is thinned to maintain resolution as patterns miniaturize, then resolution performance is improved, but etching resistance is reduced
Solution Approach 1:
The invention divides the single photoresist film into multiple functional layers: an organic underlayer film (providing etching resistance) and a photoresist film (providing patterning capability). This segmentation allows each layer to be optimized for its specific function, resolving the contradiction between thin film requirements for resolution and the need for sufficient etching resistance.
Solution Approach 2:
The invention uses composite material structure with an organic underlayer film made from specific compounds (Formula 1) combined with a photoresist film. The organic underlayer film contains compounds with high etching resistance that do not interfere with the patterning function of the photoresist film, achieving both high resolution and high etching resistance simultaneously.
2Device complexity
If a single photoresist film is used for both patterning and etching resistance, then process simplicity is maintained, but pattern transfer precision deteriorates due to lack of etching selectivity
Solution Approach 1:
The invention segments the resist system into two distinct films with different functions: the organic underlayer film provides etching resistance and the photoresist film provides patterning. This allows for precise pattern transfer by enabling selective etching of each layer with appropriate etchants, achieving high manufacturing precision.
Solution Approach 2:
The organic underlayer film acts as an intermediary layer between the substrate and the photoresist film. It provides the necessary etching resistance during substrate processing while allowing the photoresist film to maintain its patterning function, thus mediating between the requirements for pattern transfer precision and process simplicity.
3Measurement precision
If resins with low absorbance are used to achieve higher resolution, then resolution is improved, but etching resistance is reduced
Solution Approach 1:
The invention separates the functions of low absorbance (for resolution) and high etching resistance into different layers. The photoresist film uses resins with low absorbance at the exposure wavelength for high resolution, while the organic underlayer film uses compounds with high etching resistance, eliminating the trade-off between these two properties.
Solution Approach 2:
The invention creates a composite resist system where the photoresist film contains resins optimized for low absorbance (such as novolak resins, polyhydroxystyrene, or resins with aliphatic polycyclic skeletons) while the organic underlayer film contains compounds specifically selected for high etching resistance, achieving both high resolution and high etching resistance through material composition.
Data Source
AI summary
A material for forming an organic film, containing: a compound shown by formula (1); and an organic solvent. In formula (1), R1 represents one of the following formulae (2), R2 represents a nitro group, a halogen atom, a hydroxy group, an alkyloxy group, an alkynyloxy group, an alkenyloxy group, a linear, branched, or cyclic alkyl group, a trifluoromethyl group, or a trifluoromethyloxy group, “n” represents 0 or 1, “m” represents an integer of 1 to 3, “p” represents 0 or 1, “l” represents an integer of 0 to 2, and W represents a divalent organic group having 2 to 40 carbon atoms. The objective: a compound which allows the formation of an organic underlayer film having excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, favorable film-formability and adhesiveness to a substrate; and a material for forming an organic film containing the compound.