Organic Wire Mask Patterning for Nanoscale Precision
Solution Overview
Problem
Current methods for forming nanoscale patterns on substrates are complex, expensive, and limited in resolution and reproducibility, particularly for large-area or mass production, due to the random scattering of nanowires and the need for high-cost vacuum-based technologies like E-beam lithography.
Innovation Solution
A method involving the formation of organic wire or organic-inorganic hybrid wire mask patterns with circular or elliptical cross sections using techniques like electric field auxiliary robotic nozzle printing, followed by the selective removal of these masks to create precise micropatterns over large areas, allowing for the fabrication of electronic devices with controlled microspacing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If vacuum-based technologies like E-beam lithography are used to form nanoscale patterns, then manufacturing precision is improved, but device complexity and production cost increase
Solution Approach 1:
The patent replaces complex vacuum-based E-beam lithography systems with a simpler solution using pre-formed nanowire structures as self-aligned masks. The nanowires are deposited using conventional techniques and then used to define patterns through selective removal, eliminating the need for complex vacuum lithography equipment while achieving comparable nanoscale precision.
Solution Approach 2:
The patent performs preliminary pattern definition by pre-forming nanowire structures that serve as self-aligned masks before the actual pattern formation step. These nanowires are deposited and positioned in advance, creating a template that guides subsequent material deposition and pattern creation, thereby simplifying the overall manufacturing process.
2Manufacturing precision
If photolithography with deep ultraviolet light sources is used to achieve nanoscale patterns, then manufacturing precision is improved, but production cost increases
Solution Approach 1:
The patent uses inexpensive nanowire structures as disposable masks that are formed through simple deposition techniques and then selectively removed after serving their patterning function. These nanowire masks replace expensive deep ultraviolet photolithography systems, providing a low-cost alternative for achieving nanoscale pattern resolution.
3Manufacturing precision
If nanowires are randomly scattered on substrate to form nanospacings, then manufacturing precision is improved for nanoscale device fabrication, but alignment and reproducibility worsen
Solution Approach 1:
The patent introduces a structured intermediate layer (the nanowire mask pattern) that mediates between the substrate and the final pattern. This intermediate nanowire layer provides a controlled, non-random template that defines precise nanospacings while maintaining alignment control, serving as a bridge that enables both high precision and reliability.
Solution Approach 2:
The patent applies local quality control by creating nanowire masks with specific, controlled properties (spacing, orientation, density) in different regions of the substrate. This allows precise control over nanospacing characteristics in each local area while maintaining overall pattern fidelity and alignment across the entire device structure.
4Manufacturing precision
If metal nanowires with selective etching are used to form nanospacings, then manufacturing precision is improved, but device complexity and production cost increase
Solution Approach 1:
The patent extracts only the essential patterning function from complex metal nanowire fabrication processes. Instead of using multi-layer metal nanowire structures with selective etching, the patent employs simpler nanowire masks that are deposited and then completely removed after serving their patterning purpose, retaining nanoscale precision while eliminating fabrication complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the accurate formation of patterns with microspacing over large areas at reduced costs, improving alignment, reproducibility, and suitability for mass production, while replacing high-cost methods like photolithography and E-beam lithography.
Implementation Method 1
removing the organic wire or organic-inorganic hybrid wire mask pattern from the substrate
Data Source
AI summary
Provided is a method of forming a micropattern according to an aspect of the present invention. The method of forming a micropattern may include forming an organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate, forming a material layer on an entire surface of the substrate having the organic wire or organic-inorganic hybrid wire mask pattern formed thereon, and removing the organic wire or organic-inorganic hybrid wire mask pattern from the substrate to allow only the material layer on a portion of the substrate having no organic wire or organic-inorganic hybrid wire mask pattern formed thereon to be remained.