Organometallic EUV Resist Composition for High-Resolution Patterning

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Solution Overview

Problem

Current chemically amplified photoresists used in EUV lithography face challenges with resolution, photospeed, and feature roughness, particularly due to intrinsic image blur from acid-catalyzed reactions, which limits their performance in forming fine patterns for next-generation semiconductor devices.

Innovation Solution

A semiconductor resist composition incorporating an organometallic compound represented by Chemical Formula 1, which includes a central metal atom bonded with various organic groups, improves etch resistance and sensitivity, and is designed to maintain stability and solubility, allowing for the formation of high-aspect-ratio patterns without collapse during EUV exposure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If chemically amplified photoresists are used for high sensitivity, then photospeed is improved, but line edge roughness increases and resolution deteriorates

Engineering Contradiction:

ImprovephotospeedVSAvoidline edge roughness

Core Design Contradiction:

Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The patent changes the chemical parameters of the photoresist by using organometallic compounds with specific metal atoms (Sn, Pb, Ge, Zn) and controlling their composition ratios. This substitution of traditional organic compounds with organometallic compounds fundamentally alters the photoresist's chemical properties, enabling high sensitivity without the acid-catalyzed reaction issues that cause line edge roughness

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite organometallic compounds containing multiple metal atoms or metal atoms combined with other elements. These composite materials combine the beneficial properties of different metals to achieve both high photospeed and low line edge roughness, resolving the contradiction between sensitivity and precision

Inventive Principle:

Principle #40Composite materials

2Use of energy by moving object

If chemically amplified photoresists are used for high sensitivity, then photospeed is improved, but intrinsic image blur increases limiting resolution

Engineering Contradiction:

ImprovephotospeedVSAvoidresolution

Core Design Contradiction:

Use of energy by moving objectVSMeasurement precision

Solution Approach 1:

The patent changes the photoresist's chemical composition from traditional organic compounds to organometallic compounds. This parameter change eliminates the acid-catalyzed reaction mechanism that causes intrinsic image blur, allowing high resolution patterning while maintaining high photospeed through the organometallic compounds' inherent sensitivity

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If photoresist sensitivity is decreased to reduce line edge roughness, then line edge roughness is improved, but photospeed deteriorates

Engineering Contradiction:

Improveline edge roughnessVSAvoidphotospeed

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The patent uses composite organometallic compounds that combine multiple metal atoms or metal atoms with other elements. These composite materials provide both the low line edge roughness characteristic of reduced-sensitivity resists and the high photospeed of chemically amplified resists, simultaneously achieving both desirable properties

Inventive Principle:

Principle #40Composite materials

4Ease of operation

If conventional photoresists are used for EUV lithography, then ease of handling is maintained, but etch resistance is insufficient

Engineering Contradiction:

Improveease of handlingVSAvoidetch resistance

Core Design Contradiction:

Ease of operationVSStrength

Solution Approach 1:

The patent employs composite organometallic compounds that provide both good solubility (ease of handling) and high etch resistance. The specific combination of metal atoms and organic groups in these composite materials creates a material that is both processable and resistant to etching, resolving the contradiction between ease of operation and strength

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition provides enhanced etch resistance, sensitivity, and ease of handling, enabling the formation of patterns with improved resolution and reduced line edge roughness, effectively addressing the limitations of existing photoresists in EUV lithography.

Implementation Method 1

their elemental makeups may reduce light absorbance of the photoresists at a wavelength of about 13.5 nm and thus may decrease their sensitivity

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Implementation Method 2

An intrinsic image blur due to an acid catalyzed reaction in these polymer-type photoresists (e.g., polymer photoresists) limits a resolution in small feature sizes

Methodology Applied

Scientific EffectPhotochemical reaction: Photopolymerisation

Data Source

PatentUS11789362B2Semiconductor resist composition, and method of forming patterns using the composition

Publication Date: 2023.10.17 SAMSUNG SDI CO LTD

AI summary

A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent:wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(═O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.