Organometallic Oxide Gap Fill for Void-Free EUV Patterning
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Solution Overview
Problem
Conventional gap fill materials used in semiconductor manufacturing face challenges in filling narrow gaps within patterned layers, leading to voids or bubbles, and existing EUV photoresists lack sufficient sensitivity and stability for sub-10 nm feature patterning.
Innovation Solution
A low temperature, low ion energy plasma process using chemical vapor polymerization (CVP) is employed to deposit a non-solid organometallic oxide polymer on semiconductor substrates, which is further polymerized through heat treatment to form a photosensitive organometallic oxide polymer film that can be selectively exposed to EUV radiation for precise feature creation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional gap fill materials are used to fill narrow gaps within patterned layers, then the gaps can be filled, but voids or bubbles are formed reducing filling quality
Solution Approach 1:
The patent changes the physical state parameter of the gap fill material from solid to liquid-like by using organometallic precursors that form low-viscosity films during deposition. This parameter change allows the material to flow into narrow gaps completely without forming voids or bubbles, resolving the contradiction between filling quality and filling completeness
Solution Approach 2:
The patent uses composite organometallic oxide materials containing both organic and inorganic components. The organic components provide low viscosity and flowability for complete gap filling, while the inorganic oxide components provide structural stability and photosensitivity. This composite approach simultaneously achieves complete filling and high filling quality
2Adaptability or versatility
If chemically amplified resist (CAR) is used for EUV lithography, then conventional photolithography processes can be maintained, but sensitivity is poor and line-edge roughness increases
Solution Approach 1:
The patent extracts and eliminates the problematic photo-activated species diffusion mechanism from conventional CAR systems. By using direct-write EUV lithography with organometallic oxide materials, the patent removes the chemical amplification step that causes species diffusion, thereby eliminating line-edge roughness while maintaining EUV lithography capability
Solution Approach 2:
The patent substitutes the chemical amplification mechanism (chemical reactions causing species diffusion) with a direct physical writing mechanism using EUV radiation. This replacement eliminates the harmful diffusion process while maintaining the ability to pattern sub-10 nm features, resolving the contradiction between process compatibility and manufacturing precision
3Manufacturing precision
If vapor-deposited metal oxide-containing films are formed by CVD/ALD, then EUV-sensitive hardmasks can be created, but photosensitivity deteriorates due to weak and unstable bonds
Solution Approach 1:
The patent changes the bonding parameter by using organometallic precursors with stable metal-carbon bonds instead of traditional CVD/ALD processes that create weak metal-oxygen bonds. The organometallic structure maintains stable bonding while preserving EUV photosensitivity, resolving the contradiction between formation precision and bond stability
Solution Approach 2:
The patent employs composite organometallic oxide materials where the metal center provides stable bonding and the organic ligands provide EUV photosensitivity. This composite structure simultaneously achieves precise hardmask formation and stable bonding, overcoming the limitations of conventional vapor-deposited metal oxide films
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides complete gap filling with improved photosensitivity, mechanical strength, and stability, enabling precise feature formation and enhanced etch selectivity, overcoming limitations of conventional materials in EUV lithography.
Implementation Method 1
a low temperature, low ion energy plasma process that exposes the substrate surface to a plasma-excited vapor comprising a metal precursor having carbon-carbon double bonds to form a non-solid, organometallic oxide polymer layer
Implementation Method 2
The substrate is then subjected to a heat treatment to further polymerize the non-solid, organometallic oxide polymer and form a photosensitive organometallic oxide polymer film
Implementation Method 3
Upon EUV exposure, the material properties of the photosensitive organometallic oxide polymer film can be tuned to change the etch selectivity
Data Source
AI summary
New gap fill materials and methods for filling gaps within patterned layers are provided herein. In various embodiments, a non-solid organometallic oxide polymer containing liquid-like oligomer units is deposited on a patterned layer via chemical vapor polymerization (CVP). The patterned layer comprises a plurality of structures, which are spaced apart and separated by gaps. During deposition, the liquid-like oligomer units flow into the gaps between the plurality of structures to completely fill the gaps with the non-solid organometallic oxide polymer. Heat-treating the semiconductor substrate further polymerizes the non-solid organometallic oxide polymer to form a photosensitive organometallic oxide polymer film on the patterned layer and within the gaps between the plurality of structures.