Organometallic Multiple Patterning with Freeze Steps for EUV Limits
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Solution Overview
Problem
Existing photolithographic methods struggle to achieve high-resolution patterning with sufficient accuracy and fidelity as feature sizes approach the resolution limits of exposure sources like extreme ultraviolet (EUV), making it difficult to form intricate patterns efficiently.
Innovation Solution
The use of organometallic photopatternable materials with intermediate freeze steps, such as thermal bakes, to form metal oxide compositions, allowing for multiple patterning processes that include positive and negative tone developments, enabling high-resolution patterns and reducing the complexity of traditional methods like spacer aligned multiple patterning (SAMP).
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If traditional photolithographic methods are used to reduce feature sizes, then device density increases, but pattern resolution accuracy deteriorates as features approach the resolution limits of exposure sources
Solution Approach 1:
The patent applies multiple patterning steps (first pattern formation, freeze step, second pattern formation) to achieve high-resolution features. By segmenting the patterning process into discrete steps with intermediate freeze steps, the method overcomes the resolution limits of single-step photolithography and enables formation of features smaller than what can be achieved with a single exposure source.
Solution Approach 2:
The patent utilizes changes in material properties through thermal processing (freeze steps) to control pattern formation. By changing the thermal state of the organometallic photopatternable material between patterning steps, the method enables different patterning conditions and achieves higher resolution without requiring further reduction in exposure source wavelength.
2Manufacturing precision
If multiple patterning methods are used to achieve high-resolution patterns, then pattern resolution improves, but processing complexity increases
Solution Approach 1:
The patent uses organometallic photopatternable materials that can undergo both positive and negative tone developments, and the same material system is used across multiple patterning steps. This multi-functionality reduces the need for different material systems and simplifies the overall process compared to traditional multi-patterning methods that require various resists and etch chemistries.
Solution Approach 2:
The freeze step acts as an intermediary between patterning steps, stabilizing the pattern and enabling subsequent processing. This intermediate step simplifies the overall process by providing a controlled transition point that facilitates the next patterning operation without requiring complex direct transitions.
3Stability of the object's composition
If intermediate freeze steps are introduced between patterning steps, then pattern stability improves, but processing time increases
Solution Approach 1:
The freeze step utilizes controlled thermal processing to stabilize the organometallic photopatternable material pattern. By optimizing the thermal parameters (temperature, time, atmosphere), the method achieves pattern stability that enables subsequent patterning steps while minimizing the time required for the freeze step itself.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances pattern resolution and reduces processing complexity by allowing for the formation of intricate patterns with fewer steps, improving the precision and efficiency of pattern transfer onto substrates.
Implementation Method 1
irradiating a layer of a photosensitive composition over a patterned understructure to form a latent image, wherein the photosensitive composition comprises an organometallic composition with radiation sensitive ligands bound to the metal
Implementation Method 2
The invention is further directed to structures achievable using multiple layer patterning with organometallic radiation patternable resists
Data Source
AI summary
Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.