Organometallic Resist Composition for Semiconductor Pattern Formation
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Solution Overview
Problem
Chemically amplified resists in semiconductor manufacturing face issues such as reduced pattern uniformity and increased surface roughness due to acid diffusion, and require high exposure doses, making it challenging to control pattern formation at increasingly smaller scales.
Innovation Solution
A resist composition comprising an organometallic compound and a polymer that changes physical properties upon low-dose exposure, forming chemical bonds upon exposure to high-energy rays to improve pattern resolution and uniformity, without using acid labile groups or photoacid generators.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemically amplified resists are used to form patterns, then patterning capability is enabled, but acid diffusion causes reduced pattern uniformity and increased surface roughness
Solution Approach 1:
The patent removes the photoacid generator and base resin components from the resist system, extracting the harmful acid diffusion mechanism while retaining the patterning functionality through direct organometallic compound decomposition upon light exposure
Solution Approach 2:
The organometallic compound serves as an intermediary that directly converts light energy into pattern formation without generating diffusable acid species, acting as a mediator between exposure and pattern development
2Manufacturing precision
If chemically amplified resists are used, then patterning is achieved, but high exposure doses are required
Solution Approach 1:
The patent changes the chemical composition parameters of the resist system by replacing photoacid generators with organometallic compounds having specific molecular weights and structures that enable efficient light absorption and direct decomposition at lower exposure doses
Solution Approach 2:
The resist composition is formulated as a composite system combining specific polymers with organometallic compounds, where the polymer provides structural framework and the organometallic compound provides light-responsive patterning functionality with enhanced sensitivity
3Length of moving object
If semiconductor processes are performed at increasingly minute scales, then device miniaturization is achieved, but acid diffusion control becomes increasingly difficult
Solution Approach 1:
The patent eliminates the acid diffusion mechanism entirely by removing photoacid generators, making diffusion control irrelevant at miniaturized scales and enabling precise pattern formation even at very small feature sizes
Solution Approach 2:
The organometallic compound decomposition occurs locally at the exposure sites without generating diffusable species, providing spatially confined pattern formation that maintains precision at miniaturized dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition enables the formation of patterns with improved resolution and reduced surface roughness at lower exposure doses, enhancing the control and precision of semiconductor manufacturing processes.
Implementation Method 1
the resist composition includes an organometallic compound represented by Formula 1 below and a polymer including a repeating unit represented by Formula 2 below... forming chemical bonds upon exposure to high-energy rays
Data Source
AI summary
Provided are a resist composition and a method of forming a pattern using the same, the resist composition including an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below:wherein, in Formulas 1 and 2, M11, R11, R12, n, A21, L21 to L23, a21 to a23, R21 to R24, b22, p, and X21 are as described in the specification.