Organosilicate Films via CVD for Low Dielectric Constant
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Solution Overview
Problem
The microelectronics industry faces challenges in reducing the dielectric constant of silicon dioxide films while maintaining mechanical properties, as lowering the dielectric constant typically results in a decrease in elastic modulus and mechanical strength, making it difficult to produce films with both low dielectric constants and high mechanical integrity for use in integrated circuits.
Innovation Solution
A process involving the deposition of organosilicate films using a gaseous composition comprising specific silicon-containing precursors, such as organosilanes and organosiloxanes, under chemical vapor deposition conditions to achieve films with dielectric constants between 2.5 and 3.5 and elastic moduli greater than 20 GPa, enhancing mechanical properties while reducing dielectric constant.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the dielectric constant of silicon dioxide films is lowered by incorporating organics or other materials into the silicate lattice, then the dielectric constant is reduced, but the elastic modulus and mechanical strength decrease
Solution Approach 1:
The patent changes the chemical composition parameters of the silicate lattice by incorporating specific organic groups (methyl, ethyl, propyl) at controlled concentrations. This allows tuning the dielectric constant while maintaining mechanical properties through optimized compositional parameters rather than extreme modifications.
Solution Approach 2:
The patent creates composite organosilicate materials combining inorganic silicate network with organic substituents. This composite structure enables the material to exhibit both low dielectric constant (from organic components) and adequate mechanical strength (from inorganic network), resolving the trade-off between electrical and mechanical properties.
2Quantity of substance
If porous low dielectric compositions are used to reduce dielectric constant, then the dielectric constant is lowered, but mechanical integrity and stiffness are compromised
Solution Approach 1:
The patent incorporates porous structures into the organosilicate films to reduce dielectric constant. The controlled porosity introduces voids that lower the effective dielectric constant while the organic-substituted silicate matrix maintains mechanical integrity, allowing the material to survive CMP and subsequent processing.
Solution Approach 2:
The patent applies local quality by creating regions with different properties within the film - porous regions for low dielectric constant and dense organosilicate regions for mechanical strength. This spatial differentiation allows simultaneous optimization of electrical and mechanical properties in different locations of the same material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method successfully produces dense organosilicate films with improved mechanical properties, including increased elastic modulus and hardness, while maintaining a low dielectric constant, addressing the trade-off issues in existing technologies.
Implementation Method 1
Chemical vapor deposition (CVD) and spin-on dielectric (SOD) processes are typically used to prepare thin films of insulating layers
Implementation Method 2
a gaseous organosilicate composition comprising a first silicon-containing precursor selected from the group consisting of an organosilane and an organosiloxane and at least one second silicon-containing precursor selected from the compounds represented by the structure of Formula I
Data Source
AI summary
According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I:R1nSi(OR2)4-n (I),in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.