Organosilicon Layer Silicon Diffusion Oxide Semiconductor
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Solution Overview
Problem
Existing methods for forming a silicon diffusion layer inside an oxide semiconductor substrate face challenges such as crystal defect generation and substrate erosion when heated, leading to thin diffusion layers and removal issues during the dope material etching process.
Innovation Solution
A method involving the formation of an organosilicon compound layer on the substrate, followed by heating at a first temperature to initiate silicon diffusion, and subsequent removal of the layer without eroding the substrate, allowing for a second higher-temperature heating step to enhance diffusion layer thickness and crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the oxide semiconductor substrate is heated at high temperature to form a silicon diffusion layer, then the diffusion layer thickness is improved, but the substrate undergoes erosion and crystal defects are generated
Solution Approach 1:
An organosilicon compound layer is introduced as an intermediary between the silicon source and the oxide semiconductor substrate. This intermediary layer enables silicon diffusion at lower temperatures (400-600°C) without causing substrate erosion or crystal defects, while still achieving the desired diffusion layer thickness through controlled heating processes.
Solution Approach 2:
The invention changes the temperature parameter from high temperature (which causes erosion) to low temperature (400-600°C) heating. By controlling the heating temperature within this specific range and duration, the patent achieves effective silicon diffusion while preventing substrate damage and maintaining crystal structure integrity.
2Ease of manufacture
If conventional doping methods are used to form a silicon diffusion layer, then the doping process is simplified, but ion-implantation equipment and complex processes are required
Solution Approach 1:
The invention replaces the mechanical ion-implantation system with a chemical diffusion system. Instead of using ion-implantation equipment to force silicon ions into the substrate, the patent uses thermal diffusion of silicon from an organosilicon compound layer, eliminating the need for complex ion-implantation equipment and simplifying the manufacturing process.
3Ease of operation
If the dope material layer is etched to remove it, then the diffusion layer can be accessed, but the diffusion layer thickness is reduced and substrate erosion occurs
Solution Approach 1:
The organosilicon compound layer is completely extracted (removed) after serving its purpose as a silicon source. This extraction is achieved through etching processes that remove the organic compound layer without affecting the underlying oxide semiconductor substrate or the formed silicon diffusion layer, thereby accessing the diffusion layer without causing substrate erosion or thickness loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of a highly crystalline silicon diffusion layer with controlled diffusion range and thickness, avoiding crystal defects and substrate erosion, and allows for ohmic contact formation without ion-implantation.
Implementation Method 1
heating the oxide semiconductor substrate provided with the organosilicon compound layer at a first temperature to form a silicon diffusion layer inside the oxide semiconductor substrate
Data Source
AI summary
A method for manufacturing a semiconductor device is provided. The method includes forming an organosilicon compound layer on a surface of an oxide semiconductor substrate, heating the oxide semiconductor substrate provided with the organosilicon compound layer at a first temperature to form a silicon diffusion layer inside the oxide semiconductor substrate, and removing the organosilicon compound layer from the surface of the oxide semiconductor substrate after heating the oxide semiconductor substrate at the first temperature.