Organosiloxane Dielectric Etching Planarization
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Solution Overview
Problem
The increasing size of flat panel display substrates has made traditional plasma-enhanced chemical vapor deposition (PECVD) methods for dielectric materials costly and inadequate for planarization, necessitating a cost-effective method for forming interlayer and intralayer dielectrics that provide suitable planarization.
Innovation Solution
A method involving the use of organic siloxane-based dielectric materials, spin-coating, and subsequent deposition of silicon nitride layers, along with etching techniques using fluorine-based etchants and photoresist processes, to create semiconductor devices with improved planarization and electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional PECVD methods are used for depositing dielectric materials, then electrical performance is improved, but manufacturing cost increases and planarization capability deteriorates
Solution Approach 1:
The patent combines spin-coating and PECVD processes into a hybrid deposition method. The spin-coating step deposits an organic siloxane-based dielectric material as a base layer, which is then overlaid with a PECVD-deposited silicon nitride layer. This merging allows the process to benefit from both methods: the cost-effectiveness and planarization capability of spin-coating, and the superior electrical performance of PECVD.
Solution Approach 2:
The patent employs composite dielectric structures consisting of multiple layers with different material compositions. Specifically, it uses an organic siloxane-based dielectric layer combined with an inorganic silicon nitride layer. This composite approach allows the structure to exhibit both the cost and planarization advantages of organic materials and the electrical performance advantages of inorganic materials.
2Reliability
If PECVD deposited traditional dielectric materials are used, then electrical performance is improved, but planarization capability deteriorates
Solution Approach 1:
The patent merges spin-coating and PECVD processes where spin-coating provides the planarized base layer and PECVD adds the electrically superior top layer. The spin-coating process inherently provides excellent planarization due to the centrifugal force distributing the material uniformly, while the subsequent PECVD layer maintains this planarity while enhancing electrical properties.
Solution Approach 2:
The composite dielectric structure combines the planarization benefits of spin-coated organic siloxane materials with the electrical performance of PECVD silicon nitride. The organic layer serves as a planarized foundation that supports the inorganic layer, ensuring both planarity and electrical performance are achieved simultaneously.
3Reliability
If dielectric materials with dielectric constant less than 3.9 are used, then capacitive coupling is reduced, but etching selectivity deteriorates
Solution Approach 1:
The patent uses composite dielectric materials where the organic siloxane-based dielectric (with dielectric constant less than 3.9) is combined with silicon nitride layers. The fluorine-based etchant provides selective etching of the organic siloxane material while the silicon nitride layers serve as etch stops, thus maintaining both low capacitive coupling and good etching selectivity through the composite structure.
Solution Approach 2:
The silicon nitride layers act as intermediary etch stop layers between the organic siloxane dielectric and underlying structures. These intermediary layers enable selective etching processes by providing a distinct etching target for fluorine-based etchants, allowing precise control over the etching depth and preventing over-etching into underlying layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the cost-effective formation of dielectric layers with enhanced planarization and electrical properties, addressing the limitations of traditional PECVD methods by enabling thicker, more flexible films and improved manufacturing efficiency.
Implementation Method 1
These dielectric materials can contain organic groups attached to silicon (Si) in the silicon dioxide and are deposited by chemical vapor deposition
Implementation Method 2
providing a photoresist pattern over the organosiloxane dielectric material
Implementation Method 3
reactive ion etching the organosiloxane dielectric material
Data Source
AI summary
In some embodiments, a method of etching an organosiloxane dielectric material can include: (a) providing the organosiloxane dielectric material; (b) providing a patterned mask over the organosiloxane dielectric material; and (c) reactive ion etching the organosiloxane dielectric material. Other embodiments are disclosed in this application.