Organotin Clusters for EUV Patterning Resolution
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Solution Overview
Problem
Current semiconductor processing technologies face challenges in achieving high-resolution patterning of small features due to limitations in radiation-sensitive materials that can effectively absorb extreme ultraviolet light (EUV) and electron beam radiation, necessitating the development of new materials and methods for patterning smaller dimensions.
Innovation Solution
The use of organotin clusters with specific molecular structures, such as R3Sn3(O2CR′)3+x(L)2−x(OH)2(μ3-O), which are synthesized and formulated into solutions for deposition as radiation-sensitive coatings, allowing for high-resolution patterning through radiation exposure and development, leveraging the sensitivity of tin-alkyl and tin-carboxylato bonds to radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive materials are used for patterning, then the materials can be processed with existing equipment, but the resolution and sensitivity to EUV and electron beam radiation are insufficient for smaller features
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material by using organotin clusters with specific molecular structures (R3Sn3(O2CR′)3+x(L)2−x(OH)2(μ3-O)) instead of conventional materials. This compositional parameter change enables the material to achieve both high resolution and improved radiation sensitivity simultaneously.
Solution Approach 2:
The invention employs composite material design by combining multiple functional components within the organotin cluster structure, including tin atoms, carboxylato ligands, hydroxo ligands, and bridging oxygen atoms. This composite approach creates a material that exhibits both high radiation sensitivity and excellent etch contrast, resolving the contradiction between resolution and reliability.
2Manufacturing precision
If new organotin cluster materials are developed to improve radiation sensitivity, then patterning precision improves, but the complexity of material synthesis and formulation increases
Solution Approach 1:
The patent segments the complex organotin cluster material into discrete, manageable components: tin alkyl precursors, carboxylic acid ligands, and controlled hydrolysis conditions. This segmentation allows the complex cluster formation to be achieved through stepwise synthesis from simpler precursors, reducing overall process complexity while maintaining high patterning precision.
Solution Approach 2:
The invention uses controlled hydrolysis as an intermediary process that transforms simple tin alkyl precursors into the complex organotin cluster structures. This intermediary step acts as a bridge, enabling the synthesis of high-performance materials from readily available precursors without requiring direct assembly of complex molecules, thus reducing synthesis complexity.
3Length of moving object
If organotin cluster solutions are used to achieve high resolution patterning, then feature size reduces, but the difficulty of coating deposition and process control increases
Solution Approach 1:
The patent optimizes the solution parameters including concentration, solvent choice, and pH to achieve the desired coating properties. By carefully controlling these parameters, the organotin cluster solution can be deposited as uniform thin films suitable for nanometer-scale patterning while maintaining ease of coating deposition through standard techniques.
Solution Approach 2:
The invention performs preliminary characterization and optimization of the organotin cluster solution properties before actual coating deposition. This includes determining optimal concentration ranges, solvent selections, and stability conditions, which ensures that the coating process can be performed easily and reliably, reducing the difficulty of manufacturing while achieving small feature sizes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These organotin cluster compositions enable high-resolution patterning with improved radiation sensitivity and etch contrast, facilitating the formation of nanometer-scale features suitable for EUV and e-beam radiation, enhancing the precision and efficiency of semiconductor processing.
Implementation Method 1
the compositions can comprise organometallic clusters... providing good absorption of extreme ultraviolet light (EUV) and electron beam radiation
Data Source
AI summary
Organotin clusters are described with the formula R3Sn3(O2CR′)5−x(OH)2+x(μ3-O) with 0≤x<2; R=branched or cycloalkyl with 1 to 31 carbon atoms; R′=H or alkyl with 1 to 20 carbon atoms. Three carboxylato ligands are bridging, and two OH ligands are bridging. The remaining two carboxylato ligands are in non-bridging configurations, and the non-bridging carboxylato ligands are exchangeable in solution. Solutions of these clusters are suitable for forming radiation sensitive coatings that can be used to pattern nanometer scale structures. The radiation sensitive coatings are particularly suitable for EUV patterning.