Organotin EUV Resist Composition for Low-Roughness Fine Patterning
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Solution Overview
Problem
Existing patterning technologies for semiconductor devices and electronic structures face challenges in achieving high resolution and low line width roughness, particularly in the formation of fine structures, with conventional organic resists often requiring multiple processing steps and being susceptible to metal contamination.
Innovation Solution
The use of organometallic coating compositions, specifically organotin compounds with branched alkyl ligands, which are patterned using EUV radiation, allowing for high resolution patterning with low line width roughness and reduced metal contamination through controlled hydrolysis and condensation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional organic resists are used for patterning, then the patterning process can be performed, but the line width roughness increases and multiple processing steps are required
Solution Approach 1:
The patent changes the chemical composition parameters by using organometallic compounds (specifically organotin compounds with formula RSnO(3/2-x/2)(OH)x) instead of conventional organic resists. This parameter change enables single-step direct patterning with line width roughness below 5 nm, eliminating the need for multiple processing steps while improving manufacturing precision
Solution Approach 2:
The patent employs composite organometallic materials that combine organic ligands (R groups) with inorganic metal centers (Sn). This composite structure provides both the radiation sensitivity needed for patterning and the structural integrity for high-resolution features, achieving low line width roughness in a single processing step
2Manufacturing precision
If conventional patterning methods are used, then patterning can be achieved, but metal contamination increases
Solution Approach 1:
The patent extracts the harmful metal contamination by using tin (Sn) as the sole metal component in the organometallic compound. The controlled hydrolysis and condensation processes are designed to minimize metal residue, and the resulting inorganic-organic hybrid structures allow for complete removal of the patterning material without leaving metal contaminants in the fine structures
Solution Approach 2:
The organometallic compounds are designed as single-use consumable patterning materials that can be completely removed after serving their patterning function. The controlled decomposition through hydrolysis and condensation allows the material to be used and then cleanly eliminated, preventing metal contamination of the final device structures
3Manufacturing precision
If higher resolution patterning is achieved, then line width roughness decreases, but the radiation dose requirement increases
Solution Approach 1:
The patent optimizes the molecular structure parameters of the organometallic compounds, specifically the R groups attached to the tin center. By selecting appropriate organic ligands and controlling the oxidation state of tin, the material achieves high radiation sensitivity that enables sub-5 nm line width roughness at reduced radiation doses compared to conventional resists
Solution Approach 2:
The composite organometallic structure combines the benefits of organic materials (tunability, processability) with inorganic materials (radiation sensitivity, structural stability). This hybrid composition enables high-resolution patterning at lower radiation doses by leveraging the synergistic properties of both material classes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The organometallic solutions enable high resolution patterning with line width roughness below 5 nm and reduced metal contamination, facilitating efficient formation of fine structures with improved stability and processing efficiency.
Implementation Method 1
The patterning of the resist generally involves several steps including exposing the resist to a selected energy source, such as through a mask, to record a latent image
Implementation Method 2
controlled hydrolysis and condensation processes
Implementation Method 3
controlled hydrolysis and condensation processes
Data Source
AI summary
Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.