Organotin Resist Material Crystallinity Control for EUV Lithography
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Solution Overview
Problem
Existing alkyltin oxo-hydroxo compounds used as resist materials in EUV lithography lack sufficient crystallinity control and purity, which affects their performance and quality.
Innovation Solution
A tin compound with a specific crystal structure and crystallinity, represented by RSnO(3/2-X/2)(OH)x, is developed, where the organic group R has 1 to 30 carbon atoms, and the composition is optimized to achieve high purity and uniform solubility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic chemically amplifying resist is used, then ease of manufacture is maintained, but sensitivity and line width roughness performance deteriorate in EUV lithography
Solution Approach 1:
The patent changes the chemical composition parameters by using organotin compounds with specific crystal structures and crystallinity ranges (5-50% crystallinity) to achieve improved EUV lithography performance including higher sensitivity and lower line width roughness
Solution Approach 2:
The patent creates a composite resist material system combining organotin compounds with specific additives and solvents, where the tin compound serves as the core photoactive component with controlled crystallinity to achieve both performance improvement and manufacturing feasibility
2Reliability
If alkyltin oxo-hydroxo compounds are used as resist material, then sensitivity is improved, but crystallinity control and purity are insufficient
Solution Approach 1:
The patent precisely controls the crystallinity parameter of the organotin compound within 5-50% range and specifies the crystal structure type, achieving both high sensitivity and improved manufacturing precision for resist material production
Solution Approach 2:
The patent establishes a feedback mechanism by characterizing the crystal structure and crystallinity of the tin compound and using this information to optimize the resist formulation and processing conditions to achieve the desired performance
3Manufacturing precision
If high purity resist material is achieved, then line width roughness is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent performs preliminary purification and crystallization steps during the synthesis of the organotin compound to achieve high purity and controlled crystallinity before the compound is used in resist formulation, reducing the need for complex post-synthesis purification processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The tin compound exhibits high purity and uniform solubility, enhancing its performance as a resist material in EUV lithography, with improved crystallinity controlling line width roughness and etching resistance.
Implementation Method 1
an alkyltin oxo-hydroxo compound synthesized by hydrolysis of a highly pure monoalkyltin compound as a raw material
Implementation Method 2
the tin compound has a diffraction angle 2θ (°) of a peak with a strongest intensity between 5.00 to 15.00° in X-ray diffraction measurement
Data Source
AI summary
As a high-performance resist material that can have high purity and uniform solubility, the following tin compound is provided. The tin compound includes: a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand, wherein the tin compound has a diffraction angle 2θ (°) of a peak with a strongest intensity between 5.00 to 15.00° in X-ray diffraction measurement, the strongest intensity peak has a half-value width of 1.00 to 4.00°, and the organic group R has 1 to 30 carbon atoms.