Organotin Composition Synthesis for High-Yield, Low-Contamination Patterning
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Solution Overview
Problem
Existing methods for synthesizing monohydrocarbyl tin compounds face challenges in achieving high yields and low poly-organo contamination, particularly for radiation-sensitive compositions required in semiconductor patterning, and are limited by practical constraints in introducing diverse organic functional groups and halogenated ligands.
Innovation Solution
A novel synthesis method involving organo-alkali metal compounds, stannous halides, and organo halides forms stable organotin compositions with sp3 or sp2 carbon-tin bonds, allowing for the production of monohydrocarbyl tin triamides and triacetylides with low contamination and high radiation sensitivity, suitable for patterning applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional methods are used to synthesize monohydrocarbyl tin compounds, then the synthesis process is simpler, but the yield is lower and poly-organo contamination is higher
Solution Approach 1:
The synthesis is divided into two distinct stages: first forming an intermediate organometallic composition with alkali metal ions and tin ions, then reacting this intermediate with primary halide hydrocarbyl compounds. This segmentation allows each stage to be optimized independently, achieving both high yield and low contamination.
Solution Approach 2:
An intermediate organometallic composition containing alkali metal ions and tin ions is introduced as a mediator between the initial reactants and final product. This intermediate enables controlled reaction pathways that improve both yield and purity by preventing direct formation of poly-organo contaminants.
2Adaptability or versatility
If diverse organic functional groups and halogenated ligands are introduced, then patterning efficiency is improved, but the synthesis complexity increases
Solution Approach 1:
The two-stage synthesis methodology serves as a universal platform that can accommodate diverse organic functional groups and halogenated ligands. The intermediate composition acts as a versatile precursor that can react with various primary halide hydrocarbyl compounds, enabling one synthesis approach to produce multiple different organotin compounds.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables efficient synthesis of monohydrocarbyl tin compounds with low poly-organo contamination, suitable for high-resolution patterning in extreme ultraviolet (EUV) and ultraviolet (UV) lithography, and electron-beam lithography, facilitating diverse organic functional groups and halogenated ligands for improved patterning efficiency.
Implementation Method 1
reacting ML and tin (II) halide (SnX2, X═F, Cl, B, I or a mixture thereof) and optionally M′OR0 in an organic solvent, where M is Li, Na, K, Cs or a combination thereof... to form a corresponding organometallic composition with a moiety SnL3
Implementation Method 2
reacting a primary halide hydrocarbyl compound (R—X, where X is a halide atom) with an organometallic composition comprising SnL3 moieties associated with metal cations M... to form correspondingly a monohydrocarbyl tin triamide (RSn(NR′2)3) or a monohydrocarbyl tin triacetylide (RSn(C≡CLs)3)
Data Source
AI summary
Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′3)3, R′R″ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R″′O)CSnL3 or R′R″(N≡C)CSnZ3.


