Oriented Metal Bonding Structure for Fine-Pitch Chip Interconnects
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Solution Overview
Problem
Existing interconnect technologies face challenges in achieving high-density integration, reduced bond pitch, improved input/output pin density, and lower power consumption for semiconductor chips, particularly in high-performance computing applications.
Innovation Solution
The use of oriented metal bonding in semiconductor chips, where randomly oriented metal is transformed into oriented metal through thermal annealing, reducing contact resistance and enabling low-temperature bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional wire bonding or flip-chip packaging technology is used, then chip interconnection is achieved, but bond pitch reduction and input/output pin density improvement are limited
Solution Approach 1:
The patent changes the physical and chemical parameters of the metal material by controlling its crystalline orientation. Specifically, it transforms randomly oriented metal into oriented metal with specific crystallographic planes (such as <100> or <111> orientation) exposed on the surface, which enables lower bonding temperature and reduced contact resistance, thereby achieving higher pin density and improved manufacturing precision in bonding
2Reliability
If conventional bonding processes are used, then semiconductor chips are bonded, but contact resistance is high and bonding temperature is high
Solution Approach 1:
The patent changes the crystalline orientation parameter of the metal layer to achieve optimal bonding conditions. By forming oriented metal with specific crystallographic planes exposed on the surface, the material exhibits improved electrical conductivity and lower contact resistance, while also enabling bonding at reduced temperatures compared to conventional processes
3Ease of manufacture
If randomly oriented metal is used in conductors, then conductor formation is simple, but contact resistance is high
Solution Approach 1:
The patent applies local quality by creating a gradient structure where the bulk metal maintains its randomly oriented structure for ease of formation, while the surface layer is transformed into oriented metal with specific crystallographic planes exposed. This localized transformation improves contact resistance at the bonding interface without requiring complete reorientation of the entire conductor structure
Solution Approach 2:
The patent creates a composite metal structure combining randomly oriented metal in the bulk with oriented metal at the surface. This composite structure leverages the advantages of both forms: the simplicity of random orientation formation in the bulk and the low contact resistance and low-temperature bonding capability of oriented metal at the bonding interface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces contact resistance and lowers the bonding process temperature, facilitating high-density integration and improved performance in semiconductor chips.
Implementation Method 1
A thermal annealing process is performed to transform a part of the randomly oriented metal portion, which is in contact with the oriented metal layer, into an oriented metal portion
Data Source
AI summary
A semiconductor chip including a semiconductor substrate and an interconnect structure is provided. The semiconductor substrate includes semiconductor devices. The interconnect structure is disposed on the semiconductor substrate and electrically connected to the semiconductor devices. The semiconductor substrate or the interconnect structure includes at least one conductor, which includes a first conductive part and a second conductive part connected to the first conductive part. The first conductive part includes randomly oriented metal, and the second conductive part includes oriented metal. A bonding structure including the above-mentioned semiconductor chip and a fabricating method for fabricating the above-mentioned semiconductor chip are also provided.