Oriented Nanowire Growth on Patterned Substrates
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Solution Overview
Problem
Current methods for growing and harvesting nanowires lack consistency in performance characteristics, hindering the mass production of nanowire-based electronic devices.
Innovation Solution
The method involves depositing nucleating particles on a substrate, heating them to initiate nanowire growth with precursor gas mixtures, allowing for controlled orientation and length of nanowires through temperature and gas composition manipulation, and using sacrificial layers for consistent harvesting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current approaches to grow and harvest nanowires are used, then nanowires can be produced, but consistent performance characteristics cannot be achieved
Solution Approach 1:
The patent applies parameter changes by precisely controlling temperature gradients, gas flow rates, and precursor ratios during nanowire growth. By adjusting these parameters systematically, the invention achieves consistent nanowire diameter, length, and crystalline orientation, directly resolving the contradiction between manufacturing precision and reliability
Solution Approach 2:
The invention employs preliminary action through substrate patterning and nucleation site preparation before nanowire growth. By pre-defining growth locations and conditions, the process ensures consistent nanowire formation across batches, improving both manufacturing precision and performance reliability
2Productivity
If mass production of nanowires is attempted, then production volume increases, but consistency in performance characteristics deteriorates
Solution Approach 1:
The patent applies segmentation by dividing the substrate into multiple patterned regions with controlled nucleation sites. This allows parallel growth of numerous nanowires while maintaining individual control over each group's growth conditions, enabling mass production without sacrificing consistency
Solution Approach 2:
The invention uses universal growth conditions and standardized substrate patterns that can be applied across large substrate areas. This multi-functional approach allows the same process parameters to produce consistent nanowires throughout the entire substrate, scaling productivity while maintaining precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of nanowires with consistent performance characteristics, facilitating their use in electronic devices by ensuring controlled growth and efficient harvesting.
Implementation Method 1
heating them to a temperature sufficient to initiate nanowire growth
Implementation Method 2
create a liquid alloy droplet
Implementation Method 3
contacted with a second precursor gas mixture, whereby nanowires are grown at the site of the alloy droplet
Implementation Method 4
the Cl atoms allow for growth of the wires in a <100> orientation when grown on a crystallographic substrate as a result of etching of the native oxide layer on the silicon substrate
Implementation Method 5
heating them to a first temperature sufficient to initiate nanowire growth
Implementation Method 6
form a eutectic phase with the nucleating particles
Data Source
AI summary
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.