Orthogonal Pattern Mask for Single-Mask Overhang Exposure
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Solution Overview
Problem
Conventional overhang exposure in interposers requires multiple masks, leading to increased photolithographic costs and reduced wafer processing efficiency due to the limitations of existing photolithography tools.
Innovation Solution
A mask with dual patterns in orthogonal directions is used to expose overhang regions, allowing a single mask to cover both X- and Y-directional areas, reducing the need for multiple masks and optimizing exposure processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used for overhang exposure, then complete exposure coverage is achieved, but photolithographic cost increases and processing efficiency decreases
Solution Approach 1:
The patent combines multiple exposure functions into a single mask by integrating both X-directional and Y-directional exposure regions. This single mask design eliminates the need for multiple separate masks, thereby reducing mask cost and simplifying the exposure process while maintaining complete coverage of the overhang region.
Solution Approach 2:
The mask is designed with multi-functionality to perform both X-directional and Y-directional exposure tasks simultaneously. By incorporating pattern regions for both directional exposures within one mask structure, the system achieves universal coverage without requiring multiple specialized masks, thus improving productivity and reducing costs.
2Manufacturing precision
If multiple masks are used for overhang exposure, then complete exposure coverage is achieved, but photolithographic cost increases
Solution Approach 1:
The patent combines multiple exposure functions into a single mask by integrating both X-directional and Y-directional exposure regions. This single mask design eliminates the need for multiple separate masks, thereby reducing mask cost and simplifying the exposure process while maintaining complete coverage of the overhang region.
3Productivity
If a single mask is used for overhang exposure, then photolithographic cost decreases and processing efficiency increases, but exposure coverage may be insufficient
Solution Approach 1:
The patent extends the exposure capability in multiple directions by incorporating both X-directional and Y-directional pattern regions within the single mask. This multi-dimensional approach ensures that the mask can expose overhang regions in all necessary directions simultaneously, achieving complete coverage while maintaining the benefits of a single-mask process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces photolithographic costs and enhances processing efficiency by minimizing the number of masks required and streamlining the exposure process, enabling faster and more cost-effective production of interposers.
Implementation Method 1
a mask used to expose an overhang in an interposer. The mask includes a substrate, in which a first pattern is defined in a first direction and a second pattern in a second direction thereof. The first pattern is adapted for exposure of first-directional regions of the overhang, and the second pattern is adapted for exposure of second-directional regions of the overhang.
Data Source
AI summary
The present invention provides a mask, a mask stitching method and an exposure method. The mask includes a substrate, in which a first pattern is defined in a first direction and a second pattern in a second direction thereof. The first pattern is adapted for exposure of first-directional regions of the overhang, and the second pattern is adapted for exposure of second-directional regions of the overhang. With this arrangement, the overhang of the interposer can be exposed using a single mask, reducing photolithographic cost. In addition, as use of fewer masks is made possible, less effort and time is required by mask pickup. This reduces the time required by photolithographic processing, enabling more efficient photolithographic processing at even lower cost.