Orthogonal Metal-on-Metal Capacitor Design for Reduced Misalignment Variance
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Solution Overview
Problem
Current metal-on-metal (MoM) capacitors face challenges in miniaturization due to misalignment issues during the double patterning manufacturing process, leading to capacitance variance that exceeds design parameters, especially when creating electrodes with spaces smaller than 32 nanometers.
Innovation Solution
The implementation of MoM capacitors with multiple metal layers featuring orthogonally-arranged conductive arteries and orthogonally-oriented conductive fingers, which reduces capacitance variance by minimizing misalignment effects, achieved through a method involving the formation of interdigitated conductive fingers in a specific orthogonal configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the space between electrodes is reduced to smaller than 32 nanometers to achieve miniaturization, then the capacitance density is improved, but the misalignment variance during double patterning manufacturing process worsens, leading to capacitance variance exceeding design parameters
Solution Approach 1:
The patent introduces a third dimension (vertical stacking of metal layers) to increase capacitance density without further reducing the horizontal space between electrodes. By stacking multiple metal layers with conductive plates and dielectric layers, the capacitor achieves higher capacitance in the vertical direction, avoiding the need to reduce electrode spacing below 32nm and thus preventing misalignment issues during manufacturing
Solution Approach 2:
The capacitor is segmented into multiple discrete metal layers, each containing conductive plates separated by dielectric layers. This segmentation allows each layer to be manufactured and aligned independently, reducing the cumulative misalignment variance that would occur in a single-layer design with extremely fine electrode spacing
Data Source
AI summary
Certain aspects of the present disclosure provide a metal-on-metal (MoM) capacitor with metal layers, each layer having two different electrical conductors with orthogonally-arranged conductive arteries and orthogonally-oriented conductive fingers. One exemplary MoM capacitor generally includes a plurality of metal layers, wherein a first metal layer in the plurality of metal layers comprises a first electrical conductor providing a first node of the MoM capacitor and a second electrical conductor providing a second node of the MoM capacitor. According to aspects, the first electrical conductor comprises a first plurality of conductive fingers and the second electrical conductor comprises a second plurality of conductive fingers. Further, conductive fingers of the first plurality of conductive fingers are interdigitated with conductive fingers of the second plurality of conductive fingers. Additionally, the first electrical conductor in the first metal layer is oriented orthogonal to the second electrical conductor in the first metal layer.