Orthogonal Polynomial Overlay Error Modeling in Lithography

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Solution Overview

Problem

The precision of lithographic apparatus control is adversely impacted due to non-orthogonal basis functions used in modeling overlay errors across the wafer and field domains, leading to linear dependence and difficulty in estimating model parameters accurately.

Innovation Solution

Generating discrete orthogonal polynomials based on predetermined substrate measurement locations to model substrate properties, allowing for precise estimation and control of lithographic processing by using these polynomials as a basis function.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If non-orthogonal basis functions are used to model overlay errors, then the model can represent complex error patterns, but linear dependence occurs and parameter estimation precision deteriorates

Engineering Contradiction:
Improvemodel flexibilityVSAvoidparameter estimation precision
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The patent transforms the basis functions from non-orthogonal to orthogonal polynomials by changing the mathematical parameters of the model. This transformation maintains the ability to represent complex error patterns while eliminating linear dependence, thereby resolving the contradiction between model flexibility and parameter estimation precision

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent combines orthogonal polynomial basis functions with a least-squares estimation framework to create a composite modeling approach. This composite structure ensures both the representational capability to model complex overlay errors and the mathematical stability required for precise parameter estimation

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If non-orthogonal basis functions are used in the model, then the model can capture complex substrate property variations, but linear dependence makes parameter estimation difficult

Engineering Contradiction:
Improvesubstrate property modeling accuracyVSAvoidparameter estimation complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the mathematical parameters by using orthogonal polynomials instead of non-orthogonal basis functions. This parameter transformation maintains the ability to capture complex substrate variations while simplifying the parameter estimation process through the orthogonality property, which decouples the estimation equations

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If simple parameterization models are used, then the model is easier to compute, but the precision of control moves deteriorates

Engineering Contradiction:
Improvemodel computational simplicityVSAvoidcontrol move precision
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent creates a composite modeling approach that combines orthogonal polynomial basis functions with least-squares estimation. This composite structure achieves an optimal balance between computational simplicity and control precision, as the orthogonality reduces computational complexity while maintaining high modeling accuracy

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS8947642B2Method and apparatus for estimating model parameters of and controlling a lithographic apparatus by measuring a substrate property and using a polynomial model
Publication Date: 2015.02.03 ASML NETHERLANDS BV
  • US8947642B2 patent drawing
  • US8947642B2 patent drawing
  • US8947642B2 patent drawing

AI summary

System and methods estimate model parameters of a lithographic apparatus and control lithographic processing by a lithographic apparatus. An exposure is performed using a lithographic apparatus across a wafer. A set of predetermined wafer measurement locations is obtained. Discrete orthonormal polynomials are generated using the predetermined substrate measurement locations. The overlay errors arising from the exposure are measured at the predetermined locations to obtain overlay measurements. The estimated model parameters of the lithographic apparatus are calculated from the overlay measurements by using the discrete orthogonal polynomials as a basis function to model the overlay across the wafer. Finally, the estimated model parameters are used to control the lithographic apparatus in order to provide corrected overlay across the wafer.