Orthogonal Trench Electrodes in Semiconductor Devices

The patent combines the formation of trenches for trench gate electrodes and field plate electrodes into a single simultaneous etching process. By using a unified mask pattern that defines both trench types, the patent eliminates the need for separate alignment steps while maintaining optimal pitch dimensions for each electrode type. This merging of processes directly resolves the contradiction by improving productivity without sacrificing manufacturing precision.

The patent creates a universal mask pattern that serves multiple functions: it defines both short-depth trenches for trench gate electrodes and long-depth trenches for field plate electrodes simultaneously. This multi-functional mask design allows a single patterning and etching process to achieve what previously required multiple separate processes, thereby resolving the productivity issue while maintaining precise pitch control for both electrode types.

The patent merges multiple manufacturing steps (separate mask formation, separate alignment, separate etching) into a single integrated process. By combining these operations, the patent reduces manufacturing process complexity while maintaining the ability to achieve optimal pitch dimensions for both trench gate and field plate electrodes through the unified mask design.

The unified mask pattern performs multiple functions simultaneously: it patterns both short and long trenches, serves as the alignment reference for both electrode types, and defines the pitch for both structures. This multi-functionality eliminates the need for multiple specialized process steps, thereby reducing manufacturing complexity while preserving pitch precision.