Orthosilicate Oligomer Crosslinking with Group 13 Elements
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Solution Overview
Problem
Existing semiconductor structure formation techniques face challenges in enhancing the mechanical strength and adhesion of orthosilicate derived oligomer materials, which are prone to porosity and removal defects during processing, due to their amorphous and unbound nature, and previous methods like thermal, photochemical, and plasma treatments either compromise device functionality or fail to effectively crosslink the chains.
Innovation Solution
Treatment with a gaseous element from group 13, such as boron, aluminum, or gallium, under near-ambient conditions to form chemical bonds between the element and oxygen atoms of the orthosilicate derived oligomer, crosslinking the chains and increasing mechanical strength, hardness, and adhesion, thereby reducing porosity and defectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If thermal, photochemical, or plasma treatments are used to enhance mechanical strength, then adhesion may be improved, but device functionality is compromised or crosslinking effectiveness is insufficient
Solution Approach 1:
The patent changes the fundamental parameter of crosslinking chemistry by using group 13 element gaseous treatments instead of thermal, photochemical, or plasma methods. This chemical parameter change enables effective crosslinking at lower energies that do not compromise device functionality, while still achieving the desired mechanical strength enhancement through covalent bond formation between the group 13 elements and the orthosilicate oligomer chains.
2Ease of manufacture
If orthosilicate derived oligomer materials are used for structural applications, then processing ease is improved, but porosity and removal defects increase due to amorphous and unbound nature
Solution Approach 1:
The patent creates a composite structure by incorporating group 13 elements into the orthosilicate derived oligomer matrix. This composite approach maintains the ease of processing of the oligomer material while the group 13 element crosslinks create a more robust, less porous structure that reduces removal defects and improves manufacturing precision.
Solution Approach 2:
The patent replaces physical/thermal crosslinking mechanisms with chemical crosslinking mechanisms. By using group 13 element gaseous treatments that form covalent bonds, the method substitutes mechanical/thermal systems with chemical bonding systems, achieving effective crosslinking without the high energies that cause porosity and defects.
3Strength
If crosslinking is increased to reduce porosity, then mechanical strength improves, but processing complexity increases
Solution Approach 1:
The patent introduces group 13 elements as intermediary substances that facilitate crosslinking. These gaseous elements act as mediators between the orthosilicate oligomer chains, forming covalent bonds that reduce porosity and increase mechanical strength. The intermediary approach simplifies processing compared to direct thermal or plasma crosslinking methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases the mechanical strength of the structural material, enhances surface adhesion, and reduces porosity and defect formation, leading to improved integrity and longevity of semiconductor devices by increasing the Young's modulus from 4 GPa to 60 GPa and reducing unintended removal and contamination.
Implementation Method 1
Treatment with a gaseous element from group 13, such as boron, aluminum, or gallium, under near-ambient conditions to form chemical bonds between the element and oxygen atoms of the orthosilicate derived oligomer, crosslinking the chains and increasing mechanical strength, hardness, and adhesion
Implementation Method 2
Treatment with a gaseous element from group 13, such as boron, aluminum, or gallium, under near-ambient conditions to form chemical bonds between the element and oxygen atoms of the orthosilicate derived oligomer
Data Source
AI summary
Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.